2000 年度実績報告書

半導体表面におけるステップダイナミクス

研究課題

研究課題/領域番号	10044146
研究機関	名古屋大学
研究代表者	一宮彪彦名古屋大学, 工学研究科, 教授 (00023292)
研究分担者	箕田弘喜東京工業大学, 理学部, 助手 (20240757) 八木克道東京工業大学, 理学部, 名誉教授 (90016072) 岩崎裕大阪大学, 産業科学研究所, 教授 (00029901) 中原仁名古屋大学, 工学研究科, 助手 (20293649) 上羽牧夫名古屋大学, 理学研究科, 助教授 (30183213)
キーワード	半導体表面 / ステップ / エピタキシャル成長 / ナノ構造 / ステップエネルギー
研究概要	本研究では半導体表面に的を絞り、表面の動的過程、特にエピタキシャル成長や吸着・脱離過程、さらに昇華過程およびステップバンチング過程におけるステップ端での原子・分子の脱離付着機構に関する知見を得た。シリコン、GaAs、GaN表面におけるサーフアクタント効果によるエピタキシャル成長中のステップ挙動の実験結果から、サーフアクタントがステップにおける吸着障壁を変化させ、またステップエネルギーを大きく変化させることが明らかになった(一宮、中原、Cohen)。またシリコン高指数表面の金属吸着によるファセット形成の観察から、吸着による安定表面指数の変化についての知見を得た(中原、八木、箕田)。シリコン表面上に形成した単独の孤立したナノ構造の熱崩壊の過程を走査トンネル顕微鏡(STM)により観測し、その結果、ステップ端における吸着と脱離の過程がナノ構造全体のエネルギーに大きく依存することが明らかになった。また崩壊の過程におけるステップバンチングがステップ間の斥力の大きさによることも理論との協力によって明らかになった(一宮、上羽、Einstein)。さらにナノ構造の崩壊速度に関しても、物質、原子構造などによらない一般的なスケーリング則が成り立ち、さらに2次元ナノ構造の崩壊過程と3次元ナノ構造の崩壊過程の相関が明らかになった(一宮、上羽、Williams、Einstein)。またSTMによるシリコン表面上の酸化膜選択除去プロセス及び界面におけるシリコン原子ステップ解析手法の開発を行った(岩崎、Williams)。

研究成果

(24件)

すべてその他

すべて文献書誌 (24件)

[文献書誌] A.Ichimiya,K.Hayashi,E.D.Williams,T.L.Einstein,M.Uwaha and K.Watanabe: "Decay of Silicon Mound : Scaling Laws and Description with Continuum Step Parameters."Phys.Rev.Lett.. 84. 3662-3665 (2000)
[文献書誌] K.Hayashi and A.Ichimiya: "Formation and Decay Processes of Three-Dimensional Silicon Islands on the Si(111)7×7 Surface."Appl.Surf.Sci.. 162/163. 37-41 (2000)
[文献書誌] A.Ichimiya and K.Hayashi,: "Thermal Decay of Isolated Single Silicon Mounds on Si(111) Surfaces"Surface Rev.Lett.. 7. 571-576 (2000)
[文献書誌] 一宮彪彦,林和彦: "シリコン表面に形成されたナノ構造の安定性と崩壊"応用物理. 69. 1330-1334 (2000)
[文献書誌] A.Ichimiya,M.Suzuki and S.Nishida,: "Thermal Relaxation of Isolated Silicon Pyramids on the Si(100)2×1 Surface."Surf.Sci.. (印刷中). (2001)
[文献書誌] H.Suzuki,H.Nakahara,S.Miyata and A.Ichimiya,: "Surface Morphology of Ga-Adsorbed Si(113) Surface."Surface Science,. (印刷中). (2001)
[文献書誌] M.Uwaha and K.Watanabe: "Decay of an Island on a Facet via Surface Diffusion"J.Phys.Soc.Jpn.. 69. 497-503 (2000)
[文献書誌] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Steps Induced by the Drift of Adatoms and Effect of the Step Permeability"Phys.Rev.. B62. 8452-8472 (2000)
[文献書誌] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Permeable Steps Induced by the Drift of Adatoms"Surf.Rev.Lett.. 7-5/6. 607-611 (2000)
[文献書誌] R.Held,B.Ishaug,A.M.Dabiran,A.Parkhomovsky,and P.I.Cohen,: "Rate equation model of GaN epitaxy on GaN B by Molecular Beam Epitaxy,"J.Appl.Phys.,. V87. 1219-1223 (2000)
[文献書誌] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces,"J.Appl.Phys.,. V85. 7697-7701 (1999)
[文献書誌] A.Parkhomovsky,B.Ishaug,A.M.Dabiran,and P.I.Cohen,: "Growth of Hf and HfN on GaN by molecular beam epitaxy,"J.Vac.Sci.Technol.,. VA17. 2162-2166 (1999)
[文献書誌] N.Li,T.Yoshinobu and H.Iwasaki: "Scanning tunneling microscopy nanofabricatin of electronic industry compatible thermal Si oxide"Ultramicroscopy,. 82,1-4. 97-101 (2000)
[文献書誌] K.Sudoh and H.Iwasaki: "Nanopit Formation and Manipulation of Steps on Si(001) at High Temperatures with a Scanning Tunneling Microscope"Jpn.J.Appl.Phys.,. 39. 4621-4623 (2000)
[文献書誌] M.Gotoh,K.Sudoh and H.Iwasaki: "Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy"J.Vac.Sci.Technol.. B18(4)Jul/Aug. 2165-2163 (2000)
[文献書誌] H.Minoda,T.Shimakura,K.Yagi,F-J Meyer zu Herringdorf and M.Horn von Hoegen: "Formation of hill and valley structures on Si(111) vicinal surfaces studied by spot-profile-analyzing LEED,"Phys.Rev.. B61. 5672-5678 (2000)
[文献書誌] M.Degawa,K.Thuermer,Morishima,H.Minoda,K.Yagi and E.D.Williams :: "Initial stage of in-phase step wandering on Si(111) vicnal surfaces"Surface Sci.. (印刷中). (2001)
[文献書誌] D.Degawa,H.Minoda,Y.Tanishiro and K.Yagi: "In-phase step wandering on Si(111) vicinal surfaces : Effect of direct current heating tilted from the step-dwon direction."Phys.Rev.. (印刷中). (2001)
[文献書誌] K.Sudoh,H.Iwasaki,and E.D.Williams,: "Facet Growth due to attractive step-step interactions on vicinal Si(113),"Surface Science. 452. L273-L278 (2000)
[文献書誌] S.Aggarwal,A.P.Monga,S.R.Perusse,R.Ramesh,V.Ballarotto,E.D.Williams,B.R.Chalamala,Y.Wei,and R.H.Reuss,: "Spontaneous Ordering of Oxide Nanostructures,"Science. 287. 2235-2237 (2000)
[文献書誌] J.-Y.Park,R.J.Phaneuf,and E.D.Williams,: "Variation of Threshold Field in Field-Induced Fabrication of Au Nanodots on Ultrathin in-situ Grown Silicon Oxide,"Surface Science. 470. L69-L74 (2000)
[文献書誌] M.Giesen and T.L.Einstein,: "Analysis of Terrace Width Distributions on Vicinal CopperSurfaces Using the Wigner Surmise : Comparison with Gaussian Approximation"Surface Sci.. 449. 191-206 (2000)
[文献書誌] H.L.Richards,Saul D.Cohen,T.L.Einstein,and M.Giesen,: "Extraction of Step-Repulsions Strengths from Terrace Width Distributions : Statistical and Analytic Considerations,"Surface Sci.. 453. 59-74 (2000)
[文献書誌] O.Pierre-Louis and T.L.Einstein,: "Electromigration of Single-Layer Clusters,"Phys.Rev.. B・62. 13697-13706 (2000)

2000 年度 実績報告書

半導体表面におけるステップダイナミクス

研究代表者

一宮 彪彦 名古屋大学, 工学研究科, 教授 (00023292)

研究成果

[文献書誌] A.Ichimiya,K.Hayashi,E.D.Williams,T.L.Einstein,M.Uwaha and K.Watanabe: "Decay of Silicon Mound : Scaling Laws and Description with Continuum Step Parameters."Phys.Rev.Lett.. 84. 3662-3665 (2000)

[文献書誌] K.Hayashi and A.Ichimiya: "Formation and Decay Processes of Three-Dimensional Silicon Islands on the Si(111)7×7 Surface."Appl.Surf.Sci.. 162/163. 37-41 (2000)

[文献書誌] A.Ichimiya and K.Hayashi,: "Thermal Decay of Isolated Single Silicon Mounds on Si(111) Surfaces"Surface Rev.Lett.. 7. 571-576 (2000)

[文献書誌] 一宮彪彦,林和彦: "シリコン表面に形成されたナノ構造の安定性と崩壊"応用物理. 69. 1330-1334 (2000)

[文献書誌] A.Ichimiya,M.Suzuki and S.Nishida,: "Thermal Relaxation of Isolated Silicon Pyramids on the Si(100)2×1 Surface."Surf.Sci.. (印刷中). (2001)

[文献書誌] H.Suzuki,H.Nakahara,S.Miyata and A.Ichimiya,: "Surface Morphology of Ga-Adsorbed Si(113) Surface."Surface Science,. (印刷中). (2001)

[文献書誌] M.Uwaha and K.Watanabe: "Decay of an Island on a Facet via Surface Diffusion"J.Phys.Soc.Jpn.. 69. 497-503 (2000)

[文献書誌] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Steps Induced by the Drift of Adatoms and Effect of the Step Permeability"Phys.Rev.. B62. 8452-8472 (2000)

[文献書誌] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Permeable Steps Induced by the Drift of Adatoms"Surf.Rev.Lett.. 7-5/6. 607-611 (2000)

[文献書誌] R.Held,B.Ishaug,A.M.Dabiran,A.Parkhomovsky,and P.I.Cohen,: "Rate equation model of GaN epitaxy on GaN B by Molecular Beam Epitaxy,"J.Appl.Phys.,. V87. 1219-1223 (2000)

[文献書誌] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces,"J.Appl.Phys.,. V85. 7697-7701 (1999)

[文献書誌] A.Parkhomovsky,B.Ishaug,A.M.Dabiran,and P.I.Cohen,: "Growth of Hf and HfN on GaN by molecular beam epitaxy,"J.Vac.Sci.Technol.,. VA17. 2162-2166 (1999)

[文献書誌] N.Li,T.Yoshinobu and H.Iwasaki: "Scanning tunneling microscopy nanofabricatin of electronic industry compatible thermal Si oxide"Ultramicroscopy,. 82,1-4. 97-101 (2000)

[文献書誌] K.Sudoh and H.Iwasaki: "Nanopit Formation and Manipulation of Steps on Si(001) at High Temperatures with a Scanning Tunneling Microscope"Jpn.J.Appl.Phys.,. 39. 4621-4623 (2000)

[文献書誌] M.Gotoh,K.Sudoh and H.Iwasaki: "Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy"J.Vac.Sci.Technol.. B18(4)Jul/Aug. 2165-2163 (2000)

[文献書誌] H.Minoda,T.Shimakura,K.Yagi,F-J Meyer zu Herringdorf and M.Horn von Hoegen: "Formation of hill and valley structures on Si(111) vicinal surfaces studied by spot-profile-analyzing LEED,"Phys.Rev.. B61. 5672-5678 (2000)

[文献書誌] M.Degawa,K.Thuermer,Morishima,H.Minoda,K.Yagi and E.D.Williams :: "Initial stage of in-phase step wandering on Si(111) vicnal surfaces"Surface Sci.. (印刷中). (2001)

[文献書誌] D.Degawa,H.Minoda,Y.Tanishiro and K.Yagi: "In-phase step wandering on Si(111) vicinal surfaces : Effect of direct current heating tilted from the step-dwon direction."Phys.Rev.. (印刷中). (2001)

[文献書誌] K.Sudoh,H.Iwasaki,and E.D.Williams,: "Facet Growth due to attractive step-step interactions on vicinal Si(113),"Surface Science. 452. L273-L278 (2000)

[文献書誌] S.Aggarwal,A.P.Monga,S.R.Perusse,R.Ramesh,V.Ballarotto,E.D.Williams,B.R.Chalamala,Y.Wei,and R.H.Reuss,: "Spontaneous Ordering of Oxide Nanostructures,"Science. 287. 2235-2237 (2000)

[文献書誌] J.-Y.Park,R.J.Phaneuf,and E.D.Williams,: "Variation of Threshold Field in Field-Induced Fabrication of Au Nanodots on Ultrathin in-situ Grown Silicon Oxide,"Surface Science. 470. L69-L74 (2000)

[文献書誌] M.Giesen and T.L.Einstein,: "Analysis of Terrace Width Distributions on Vicinal CopperSurfaces Using the Wigner Surmise : Comparison with Gaussian Approximation"Surface Sci.. 449. 191-206 (2000)

[文献書誌] H.L.Richards,Saul D.Cohen,T.L.Einstein,and M.Giesen,: "Extraction of Step-Repulsions Strengths from Terrace Width Distributions : Statistical and Analytic Considerations,"Surface Sci.. 453. 59-74 (2000)

[文献書誌] O.Pierre-Louis and T.L.Einstein,: "Electromigration of Single-Layer Clusters,"Phys.Rev.. B・62. 13697-13706 (2000)

2000 年度実績報告書

一宮彪彦名古屋大学, 工学研究科, 教授 (00023292)