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[文献書誌] T.Ohmi: "Improvement of Gate Oxide Reliability for Tantalum-Gate MOS Devices Using Xenon Plasma Sputtering Technology"IEEE Trans. On Electron Devices. 45.11. 2349-2354 (1998)
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[文献書誌] T.Ohmi: "Minimization of BF_2 Implantation Dose to Reduce the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃"Jpn. J. Appl. Phys.. 37 3B. 1166-1170 (1998)
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[文献書誌] T.Ohmi: "Enhancement of silicon epitaxy by Increased Phosphorus concentration in a low-energy ion bombardment process"Jpn. J. Appl. Phys.. 37. 3268-3271 (1998)
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[文献書誌] T.Ohmi: "Formation of Ultra-shallow and Low-reverse-bias-current Tantalum-silicided Junctions Using a Si-Encapsulated Silicidation Technique"Jpn. J. Appl. Phys.. 87・.8. 4277-4283 (1998)
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[文献書誌] T.Ohmi: "Thin and Low-Resistivity Tantulum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization"Jpn. J. Appl. Phys.. 38.4B. 2401-2405 (1999)
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[文献書誌] T.Ohmi: "Gate Oxide Reliability Concerns in Gate-Metal Sputtering Deposition Process: An Effect of Low-Energy Large-Mass Ion Bombardment"Microelectronics Reliability. 39・3. 327-332 (1999)