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[文献書誌] B.V.Rao: "Growth temperature dependent role of In (4x1) surface for the heteroepitaxy of InSb on Si (111)"Journal of Applied Physics. 87. 724-729 (2000)
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[文献書誌] M.Mori: "Effect of current flow direction on the heteroepitaxial growth of InSb on Ge/Si (001) substrate heated by direct current"Applied Surface Science. 159-160. 328-334 (2000)
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[文献書誌] B.V.Rao: "Growth temperature effect on the heteroepitaxy of InSb on Si (111)"Applied Surface Science. 159-160. 335-340 (2000)
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[文献書誌] B.V.Rao: "Role of In (4x1) superstructure on the heteroepitaxy of InSb on Si (111) substrate"Applied Surface Science. 162-163. 263-269 (2000)
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[文献書誌] B.V.Rao: "Effect of In (4x1) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si (111) Substrate,"Jpn.J.Appl.Phys.. 39,Part 1,No.7A. 3935-3942 (2000)
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[文献書誌] B.V.Rao: "Sb adsorption on Si(111)-In( 4x1) surface phase"Applied Surface Science. (to be published).
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[文献書誌] B.V.Rao: "How Si (001)-In (4x3) Reconstruction Improves the Epitaxial Quality of InSb Films Grown on (001) Substrates?"Surface Science. (to be published).
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[文献書誌] B.V.Rao: "Twinned InSb molecular layer on Si(111) substrate"Surface Science. (to be published).
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[文献書誌] B.V.Rao: "Heteroepitaxial Growth of High Quality InSb on Si (111) Substrate Using 2-step Growth Method"Semiconductor Science & Technoplogy. (to be published).
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[文献書誌] B.V.Rao: "Growth of high-quality InSb films on Si(111) substrates without buffer layers."J.Crystal Growth. (to be published).
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[文献書誌] B.V.Rao: "Structural transformations during Sb adsorption on Si (111)-In (4x1) reconstruction"Jpn.J.Appl.Phys.. (to be published).