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[文献書誌] T.Teramoto,N.Watanabe,M.Fujimura,H.Nohira,T.Hattori: "Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si (100)"Applied Surface Science. 159/160. 67-71 (2000)
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[文献書誌] M.Fujimura,K.Inoue,N.Nohira,T.Hattori: "Atomic-scale surface morphology of ultrathin thermal oxide formed on Si (100) surface"Applied Surface Science. 162/163. 62-68 (2000)
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[文献書誌] H.Nohira,K.Hirose,K.Takahashi,T.Hattori: "Elastic scattering of Si 2p photoelectorons in ultrathin silicon oxides"Applied Surface Science. 162/163. 304-308 (2000)
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[文献書誌] K.Hirose,H.Nohira,K.Sakano,T.Hattori: "Atomic structure of SiO_2 at SiO_2/Si interfaces"Applied Surface Science. 166. 455-459 (2000)
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[文献書誌] N.Watanabe,Y.Teramoto,A.Omura,H.Nohira,T.Hattori: "Detection of interface states correlated with SiO_2/Si (111) interfaces structures"Applied Surface Science. 166. 460-464 (2000)
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[文献書誌] K.Takahashi,H.Nohira,T.Nakamura,T.Ohmi,T.Hattori: "Influence of Interface Structure on Oxidation Rate of Silicon"Japanese Journal of Applied physics. 40. L68-L70 (2001)