2003 年度実績報告書

窒化III-V族混晶の電子物性解明と応用に関する研究

研究課題

研究課題/領域番号	11102005
研究機関	徳島大学
研究代表者	酒井士郎徳島大学, 工学部, 教授 (20135411)
研究分担者	西野克志徳島大学, 工学部, 講師 (70284312) 直井美貴徳島大学, 工学部, 助教授 (90253228)
キーワード	InNAs / 窒化物 / ナローギャップ半導体 / MOCVD / プラズマ / ワイドギャップ半導体 / GaN / 電子物性
研究概要	III-V族化合物半導体の中でも、周期律表の第2行に属するN(窒素)原子と他のV族原子を同時に含む混晶半導体(以下、窒化III-V族混晶と呼ぶ)は、極めて特異な性質を持つことが示されている。本研究の目的は、窒化III-V族混晶をMOCVD法で成長すること、およびそれらの物性を評価してデバイスの高性能化に応用することである。サファイアの上につけるとGaNPがひどくポーラスになり、これを旨く使ったのがGaNPエピ結晶である。GaNPバッファーを使うと10^8cm^2程度まで転位密度が低下する。これは、GaNP結晶がまばら状に付き、その間で発生する転位を減らすためと考えられている。このバッファーを用いて、従来のサファイア基板上に形成されたLEDを大幅に上回る3%(365nm),6%(370nm)の外部量子効率がえられた。これと同じ事をAlNに適用しようとすると、これがなかなかうまく行かない。これは、AlNが3次元の核発生をするためである、AlNの成長にはAlN/Alという中間層を用いて転位が低減出来る。この転位低減層を用いて波長340nmのLEDを作製した。一方、長波帯への応用の観点から、In(As,Sb)N材料を検討した。通常MOCVD成長で窒素源として使用されるNH_3は、他の原料との分解温度の違いから適当ではない。そのため、ジメチルヒドラジンを用いた成長を試み、予備実験として、GaAs基板上に立方晶GaN、InNの成長を確認した。この結果に基づき、InAsN系材料についてはInAsN/GaAs構造を用いることにより、その吸収端エネルギーがN組成増加とともに小さくなることをFTIRにより確認した。InSbN系材料については、Sb,Nの取り込まれ効率がAs,N以上に異なるため同じ条件化では難しい。

研究成果

(21件)

すべてその他

すべて文献書誌 (21件)

[文献書誌] Kazunori Aoyama: "A Novel Method of Building Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn.J.Appl.Phys.Part2. 42・3B. L270-L272 (2003)
[文献書誌] Hiroyuki Naoi: "Growth of InAs on GaAs(1 0 0) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 250. 290-297 (2003)
[文献書誌] Jin-Ping AO: "AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers"Jpn.J.Appl.Phys.Part 1. 42・4A. 1588-1589 (2003)
[文献書誌] H.D.Li: "Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy"Journal of Crystal Growth. 247. 28-34 (2003)
[文献書誌] M.Tsukihara: "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition"Applied Physics Letter. 82・6. 919-921 (2003)
[文献書誌] M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn.J.Appl.Phys.. 42・4A. 1514-1516 (2003)
[文献書誌] K.Nishino: "Effects of Surface Nitridation of Sapphire on MOCVD-AlN"First Asia-Pacific Workshop on Widegap Semiconductors. P104. 248 (2003)
[文献書誌] Jin-Ping Ao: "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate"First Asia-Pacific Workshop on Widegap Semiconductors. P108. 258 (2003)
[文献書誌] H.X.Wang: "Effect of barrier composition symmetrization on emission mechanism of light emitting diode with single quantum well active layer"First Asia-Pacific Workshop on Widegap Semiconductors. Tdv03. 199 (2003)
[文献書誌] Hisao Sato: "High efficiency AlGaInN-based light-emitting diode in 360-380 nm wavelength"phys.stat.sol.(a). 200, No.1. 102-105 (2003)
[文献書誌] Young-Bae Lee: "High efficiency GaN light-emitting diode with high resistance p-pad region using plasma su treatment"phys.stat.sol.(a). 200, No.1. 87-90 (2003)
[文献書誌] L.L.Maksimov: "Cracks and dislocation structures in AlGaN systems"phys.stat.sol.(c). 0 No.7. 2432-2435 (2003)
[文献書誌] Y.Naoi: "Growth and evaluation of GaN with SiN interlayer by MOCVD"The Fifth International Conference on Nitride Semiconductors. 2077-2081 (2003)
[文献書誌] Kazunori Aoyama: "MOCVD growth of InGaN with an artificial compositional distribution"The Fifth International Conference on Nitride Semiconductors. 223 (2003)
[文献書誌] M.Tsukihara: "The influence of a low temperature GaNP buffer on GaN growth by metalorganic chemical vapor deposotion"phys.stat.sol.(c). 0 No.7. 2757-2760 (2003)
[文献書誌] M.Tsukihara: "XPS MEASUREMENT OF InNAs"The Fifth International Conference on Nitride Semiconductors. 487 (2003)
[文献書誌] R.Aleksiejunas: "Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayer"APPLIEDPHYSICSLETTERS. 83, 6. 1159-11159 (2003)
[文献書誌] J.Vaitkus: "Semi-insulating GaN and its evaluation for particle detection"Nuclear Instruments and Methods in Physics Research Section A. 509, 1. 60-64 (2003)
[文献書誌] J.Vaitkus: "Space charge effects, carrier capture transient behaviour and particle detection in semi-insulating GaN"Nuclear Instruments and Methods in Physics Research Section A. 514, 1. 141-145 (2003)
[文献書誌] J.P.Ao: "Copper gate AlGaN/GaN HEMT with low gate leakage current"IEEE Electron Device Letters. 24, 8. 500-502 (2003)
[文献書誌] A.Sasakia: "Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well"Solid State Communications. 129. 31-35 (2004)

2003 年度 実績報告書

窒化III-V族混晶の電子物性解明と応用に関する研究

研究代表者

酒井 士郎 徳島大学, 工学部, 教授 (20135411)

研究成果

[文献書誌] Kazunori Aoyama: "A Novel Method of Building Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn.J.Appl.Phys.Part2. 42・3B. L270-L272 (2003)

[文献書誌] Hiroyuki Naoi: "Growth of InAs on GaAs(1 0 0) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 250. 290-297 (2003)

[文献書誌] Jin-Ping AO: "AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers"Jpn.J.Appl.Phys.Part 1. 42・4A. 1588-1589 (2003)

[文献書誌] H.D.Li: "Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy"Journal of Crystal Growth. 247. 28-34 (2003)

[文献書誌] M.Tsukihara: "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition"Applied Physics Letter. 82・6. 919-921 (2003)

[文献書誌] M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn.J.Appl.Phys.. 42・4A. 1514-1516 (2003)

[文献書誌] K.Nishino: "Effects of Surface Nitridation of Sapphire on MOCVD-AlN"First Asia-Pacific Workshop on Widegap Semiconductors. P104. 248 (2003)

[文献書誌] Jin-Ping Ao: "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate"First Asia-Pacific Workshop on Widegap Semiconductors. P108. 258 (2003)

[文献書誌] H.X.Wang: "Effect of barrier composition symmetrization on emission mechanism of light emitting diode with single quantum well active layer"First Asia-Pacific Workshop on Widegap Semiconductors. Tdv03. 199 (2003)

[文献書誌] Hisao Sato: "High efficiency AlGaInN-based light-emitting diode in 360-380 nm wavelength"phys.stat.sol.(a). 200, No.1. 102-105 (2003)

[文献書誌] Young-Bae Lee: "High efficiency GaN light-emitting diode with high resistance p-pad region using plasma su treatment"phys.stat.sol.(a). 200, No.1. 87-90 (2003)

[文献書誌] L.L.Maksimov: "Cracks and dislocation structures in AlGaN systems"phys.stat.sol.(c). 0 No.7. 2432-2435 (2003)

[文献書誌] Y.Naoi: "Growth and evaluation of GaN with SiN interlayer by MOCVD"The Fifth International Conference on Nitride Semiconductors. 2077-2081 (2003)

[文献書誌] Kazunori Aoyama: "MOCVD growth of InGaN with an artificial compositional distribution"The Fifth International Conference on Nitride Semiconductors. 223 (2003)

[文献書誌] M.Tsukihara: "The influence of a low temperature GaNP buffer on GaN growth by metalorganic chemical vapor deposotion"phys.stat.sol.(c). 0 No.7. 2757-2760 (2003)

[文献書誌] M.Tsukihara: "XPS MEASUREMENT OF InNAs"The Fifth International Conference on Nitride Semiconductors. 487 (2003)

[文献書誌] R.Aleksiejunas: "Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayer"APPLIEDPHYSICSLETTERS. 83, 6. 1159-11159 (2003)

[文献書誌] J.Vaitkus: "Semi-insulating GaN and its evaluation for particle detection"Nuclear Instruments and Methods in Physics Research Section A. 509, 1. 60-64 (2003)

[文献書誌] J.Vaitkus: "Space charge effects, carrier capture transient behaviour and particle detection in semi-insulating GaN"Nuclear Instruments and Methods in Physics Research Section A. 514, 1. 141-145 (2003)

[文献書誌] J.P.Ao: "Copper gate AlGaN/GaN HEMT with low gate leakage current"IEEE Electron Device Letters. 24, 8. 500-502 (2003)

[文献書誌] A.Sasakia: "Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well"Solid State Communications. 129. 31-35 (2004)

2003 年度実績報告書

酒井士郎徳島大学, 工学部, 教授 (20135411)