2002 年度実績報告書

電子励起を用いた原子分子操作

研究課題

研究課題/領域番号	11222101
研究機関	東京大学
研究代表者	前田康二東京大学, 大学院・工学系研究科, 教授 (10107443)
研究分担者	上浦洋一岡山大学, 工学部, 教授 (30033244) 金崎順一大阪市立大学, 工学部, 助教授 (80204535) 長岡伸一愛媛大学, 理学部, 助教授 (30164403) 篠塚雄三和歌山大学, システム工学部, 教授 (30144918) 萱沼洋輔大阪府立大学, 工学部, 教授 (80124569)
キーワード	電子励起 / 原子分子操作 / 半導体 / ナノプロセス / 光励起 / 表面制御 / 欠陥制御 / サイト選択性
研究概要	平成11〜13年度にかけて、半導体における電子励起原子移動現象(構成原子の大きな変位・移動、欠陥の生成・分解、拡散の促進、表面原子の脱離など)について、対象とする物質や問題意識を共有しながら、8つの研究班の協力により、現象の全容と個々のメカニズムを明らかにした。さらに得られた知見をもとにして、各計画班の創意による先鋭的な原子・分子操作技術を発展・結集し、制御性と効率の良い、これまでにない全く新しい原子・分子操作技術を開発し、次世代素子の実現のための材料制御に新たな道を開くための共同研究を行った。具体的には、Si、C、CaAsなどの物質を対象とし、電子励起法としてレーザー光、放射光、電子線、イオン照射、プローブ、荷電制御といった様々な方法を用い、○異なる励起方法の相互関係と従属関係を解明し、いかにすれば○高い制御性(選択性)をもって、○効率の良いナノプロセスが可能となるかを明らかにした。また、本研究目的に必要な新しいスペクトロスコピー・マイクロスコピーなど実験手法の開発、電子励起状態でのab-initio動力学法など理論的計算手法の開発を行った。本年度は研究取りまとめとして、班長会議を2回、研究会を1回開催し、NewsLetterを1回発行した。領域全体としては、高効率化と選択性の向上に関して次のような一般的指針を明らかにした。すなわち、効率の高い物質系は、電子励起状態が軌道縮退した半導体中の多くの欠陥中心、○短時間で変位を起こしえる水素など軽元素、構造的に柔軟性を有する欠陥・表面、また物質的に多様な軌道混成をとりえる炭素物質、であること。また効率を上げるためには、高密度励起による長寿命2正孔状態の生成や不安定化駆動力の増大、協調励起による反応促進、パラレルプロセスの採用、等を図ることが有効であること。さらに、本来有するサイト選択性を生かすためには、高密度励起による多正孔局在効果の利用、励起電子(正孔)のバンド拡散の抑制、が重要であること。である。

研究成果
(40件)

すべてその他

すべて文献書誌 (40件)

[文献書誌] 飛田聡, 目良裕, 前田康二: "STMナノスペクトロスコピー"表面科学. 23・4. 1145-1149 (2002)
[文献書誌] H.Amasuga, M.Nakamura, Y.Mera, K.Maeda: "The Atomic Processes of Ultraviolet-Laser-induced Etching pf Chlorinated Silicon (111) Surface"Appl. Surf. Sci.. 197-198. 577-580 (2002)
[文献書誌] Y.Nakamura, Y.Mera, K.Maeda: "Spatially Extended Polymerization of C_<60> Clusters induced by Localized Current Injection from Scanning Tunneling Micrscope Tips"Molecul. Cryst. Liq. Cryst.. 386. 135-138 (2002)
[文献書誌] A.Yajima, S.Abe, K.Suzuki, T.Fuse, Y.Mera, K.Maeda: "Electron-irradiation-induced Ordering in Tetrahedral-Amorphous Carbon Films"Molecul. Cryst. Liq. Cryst. 388. 147-151 (2002)
[文献書誌] K.Maeda, A.Hida, Y.Mera: "STM Nanospectroscopic Study of Defects in Semiconductors"Mat. Res. Soc. Symp. Proc.. 719. 153-158 (2002)
[文献書誌] Y.Nakamura, Y.Mera, K.Maeda: "Nano-scale Imaging of Electronic Surface Transport Probed by Atom Movements Induced by Scanning Tunneling Micrscope Current"Phys. Rev. Lett. 89・26. 266805 (2002)
[文献書誌] H.Suzuki, K.Okada, K.Kamimori, J.Sasaki, H.Yoshida, A.Hiraya, Y.Shimizu, S.Nagaoka, Y.Tamenori, H.Ohashi, T.Ibuki: "Auger Electron Spectra of Kr2p Holes Using Monochromatic Soft X-Rays"Surf. Rev. Lett. 9・1. 63-68 (2002)
[文献書誌] T.Ibuki, K.Okada, K.Kamimori, J.Sasaki, H.Yoshida, A.Hiraya, I.H.Suzuki, N.Saito, S.Nagaoka, Y.Shimizu, H.Ohashi, Y.Tamenori: "Resonant Auger Spectra of Kr near the L3 Threshold"Surf. Rev. Lett. 9・1. 85-88 (2002)
[文献書誌] Y.Tamenori, K.Okada, S.Nagaoka, T.Ibuki, S.Tanimoto, Y.Shimizu, A.Fujii, Y.Haga, H.Yoshida, H.Ohashi, I.H.Suzuki: "A Study on Multi-Charged Xe Ions Formed through 3d Hole Stales Using a Coincidence Technique"J. Phys. B. 35・12. 2799-2809 (2002)
[文献書誌] S.Nagaoka, K.Mase, A.Nakamura, M.Nagao, J.Yoshinobu, S.Tanaka: "Site-Specific Fragmentation Caused by Core-Level Photoionization : Effect of Chemisorption"J. Chem. Phys. 117・8. 3961-3971 (2002)
[文献書誌] S.Tanaka, K.Mase, S.Nagaoka, M.Nagasono, M.Kamada: "Ion Desorption Induced by Core-Level Excitation of H2O/Si(100) : Evidence of Desorption due to the Multielectron Excitation/Decay"J. Chem. Phys. 117・9. 4479-4488 (2002)
[文献書誌] 長岡伸一: "内殻励起後のサイト選択的解離の研究"真空. (in press). (2003)
[文献書誌] K.Mase, M.Nagasono, S.Tanaka, T.Sekitani, S.Nagaoka: "Ion Desorption from Molecules Condensed at Low Temperature : A Study with Electron-Ion Coincidence Spectroscopy Combined with Synchrotron Radiation"Fizika Nizkikh Temperature ; Low Temperature Physics. (in press). (2003)
[文献書誌] J.Kanasaki: "Laser-induced electronic desorption of Si atoms from Si(111)-(7x7)"Physical Review B. 66・12. 125320 (2002)
[文献書誌] J.Kanasaki: "Primary Processes of Laser-Induced Selective Dimer-Layer Removal on Si(001)-(2x1)"Physical Review Letters. 89・25. 257601 (2002)
[文献書誌] J.Kanasaki: "Laser-induced electronic bond breaking and desorption on Si8001)-(2x1)"Surface Science. (in press). (2003)
[文献書誌] E.Inami: "Electronic bond rupture of Si atoms on Si(111)-(2x1)indnced by 1.16-eV photon excitation"Surface Science. (in press). (2003)
[文献書誌] T.Makimura, T.Mizuta, K.Murakami: "Laser Ablation Synthesis of Hydrogenerated Silicon nanoparticles with Green Photoluminescence in the Gas Phase"Jpn. J. Appl. Phys. 41・2A. 144-146 (2002)
[文献書誌] T.Mizuta, D.Takeuchi, Y.Kawaguchi, T.Makimura, K.Murakami: "Dynamics of Hydrogenation of Si Nanoparticles with Green Photoluminescence"Appl. Surface Science. 197-198. 574-576 (2002)
[文献書誌] C.Li, K.Kondo, T.Makimura, K.Murakami: "Fabrication of Er-doped Si nanocrystallites without Thermal Quenching"Appl. Surface Science. 197-198. 607-609 (2002)
[文献書誌] T.Makimura, Y.Yamamoto, S.Mitani, T.Mizuta, C.Li, D.Takeuchi, K.Murakami: "Functional Impurity Doping and Surface Modification of Si Nanocrystals"Appl. Surface Science. 197-198. 670-673 (2002)
[文献書誌] D.Takeuchi, T.Mizuta, T.Makimura, S.Yoshida, M.Fujita, K.Hata, H.Shigekawa, K.Murakami: "Desoprtion Dynamics of Previously Deposited Si Nanoparticles"Appl. Surface Science. 197-198. 674-678 (2002)
[文献書誌] K.Murakami, C.Li, K.Kondo, Y.Yamamoto, S.Mitani, T.Makimura: "Er and P Impurity Doping in Si Nanostructures Fabricated by Laser Ablation"Proc. SPIE. 4636. 67-75 (2002)
[文献書誌] Changquing Li, K.Kondo, T.Makimura, K.Murakami: "Increase of 1.5μm Luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO2 Films with Si Nanocrystallites by laser Ablation"Jpn. J. Appl. Phys. (in press). (2003)
[文献書誌] M.Fujii, A, Mimura, S.Hayashi, Y.Yamamoto, K.Murakami: "Hyperfine Structure of Electron Spin Resonance of Phosphorus Doped Si Nanocrystals"Phys. Rev. Letters. 89. 206805-1-206805-4 (2002)
[文献書誌] A.Uedono, T.Mori, K.Morisawa, K.Murakami, T.Ohdaira, R.Suzuki, T.Mikado, K.Ishioka, M.Kitajima, S.Hishita, H.Haneda, I.Sakaguchi: "Hydrogen-terminated Defects in Ion-Implanted Silicon probed by Monoenergetic Positron Beams"J. Appl. Phys. 93. 3228-3233 (2003)
[文献書誌] M.Ishikawa, M.Yoshimura, K.Ueda: "Carbon nanotube as a probe for friction force microscopy"Physica B : Condensed Matter. 323. 184-186 (2002)
[文献書誌] K.Ojima, M.Yoshimura, K.Ueda: "Structural and electronic property of barium silicide on Si(100)"Jpn. J. Appl. Phys.. 41・7B. 4965-4968 (2002)
[文献書誌] M.Ishikawa, M.Yoshimura, K.Ueda: "Simultaneous Measurement of Topography and Contact Current by Contact Mode AFM with Carbon Nanotube Probe"Jpn. J. Appl. Phys.. 41・7B. 4908-4910 (2002)
[文献書誌] K.Umezawa, T.Tatsuta, S.Nakanishi, K.Ojima, M.Yoshimura, K.Ueda, W.M.Gibson: "Surfactant-induced layer-by-layer of Ag on Cu(111) : ICISS and STM studies"Surface Science. (in press). (2003)
[文献書誌] T.Meguro, A.Hida, Y.Koguchi, H.Takai, K.Maeda, Y.Aoyagi: "Nanoscale Modification of Solid surfaces by Slow Highly Charged Ion Impact"Nuclear Instrum. Meth. B. (in press). (2003)
[文献書誌] A.Hida, T.Meguro, K.Maeda, Y.Aoyagi: "Analysis of Surface Reactions on Graphite Induced by Slow Highly Charged Ion Impacts"Nuclear Instrum. Meth. B. (in press). (2003)
[文献書誌] T.Meguro, A.Hida, Y.Koguchi, S.Miyamoto, Y.Yamamoto, H.Takai, K.Maeda, Y.Aoyagi: "Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation"Nuclear Instrum. Meth. B. 92・7. 3615-3619 (2003)
[文献書誌] T.Ishiyama, S.Nawae, T.Komai, Y.Yamashita, Y.Kamiura, T.Hasegawa, K.Inoue, K.Okuno: "Photoluminescence of Er in strained Si on SiGe layer"Journal of Applied Physics. 93・1. 134-138 (2002)
[文献書誌] Y.Yamashita, Y.Kamiura, I.Yamamoto, T.Ishiyama, Y.Sato: "Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon"Journal of Applied Physics. 93・1. 134-138 (2003)
[文献書誌] T.Uozumi, Y.Kayanuma: "Excited states of an electron-hole pair confined in spherical quantum dots and their optical properties"Phyts. Rev. B. 65・16. 165318-165329 (2002)
[文献書誌] K.Saito, Y.Kayanuma: "Nonadiabatic transition probabilities in the presence of strong dissipation at avoided level crossing point"Phys. Rev. A. 65. 033407-0334017 (2002)
[文献書誌] M.Yagi, Y.Kayanuma: "Theory for Carrier-Induced Ferromagnetism in Diluted MagneticSemiconductors"J. Phys. Soc. Jpn.. 71. 2010-2018 (2002)
[文献書誌] M.Fukaya, Y.Kayanuma, M.Itoh: "Lattice Relaxation of Outermost Core Holes in Auger-Free Luminescence of CsCl"J. Phys. Soc. Jpn.. 71. 2557-2565 (2002)
[文献書誌] T.Sato, Y.Kayanuma: "Quantum inelasticity in reflection of a composite particle"Europhys. Letters. 60. 331-336 (2002)

2002 年度 実績報告書

電子励起を用いた原子分子操作

研究代表者

前田 康二 東京大学, 大学院・工学系研究科, 教授 (10107443)

研究成果

[文献書誌] 飛田聡, 目良裕, 前田康二: "STMナノスペクトロスコピー"表面科学. 23・4. 1145-1149 (2002)

[文献書誌] H.Amasuga, M.Nakamura, Y.Mera, K.Maeda: "The Atomic Processes of Ultraviolet-Laser-induced Etching pf Chlorinated Silicon (111) Surface"Appl. Surf. Sci.. 197-198. 577-580 (2002)

[文献書誌] Y.Nakamura, Y.Mera, K.Maeda: "Spatially Extended Polymerization of C_<60> Clusters induced by Localized Current Injection from Scanning Tunneling Micrscope Tips"Molecul. Cryst. Liq. Cryst.. 386. 135-138 (2002)

[文献書誌] A.Yajima, S.Abe, K.Suzuki, T.Fuse, Y.Mera, K.Maeda: "Electron-irradiation-induced Ordering in Tetrahedral-Amorphous Carbon Films"Molecul. Cryst. Liq. Cryst. 388. 147-151 (2002)

[文献書誌] K.Maeda, A.Hida, Y.Mera: "STM Nanospectroscopic Study of Defects in Semiconductors"Mat. Res. Soc. Symp. Proc.. 719. 153-158 (2002)

[文献書誌] Y.Nakamura, Y.Mera, K.Maeda: "Nano-scale Imaging of Electronic Surface Transport Probed by Atom Movements Induced by Scanning Tunneling Micrscope Current"Phys. Rev. Lett. 89・26. 266805 (2002)

[文献書誌] H.Suzuki, K.Okada, K.Kamimori, J.Sasaki, H.Yoshida, A.Hiraya, Y.Shimizu, S.Nagaoka, Y.Tamenori, H.Ohashi, T.Ibuki: "Auger Electron Spectra of Kr2p Holes Using Monochromatic Soft X-Rays"Surf. Rev. Lett. 9・1. 63-68 (2002)

[文献書誌] T.Ibuki, K.Okada, K.Kamimori, J.Sasaki, H.Yoshida, A.Hiraya, I.H.Suzuki, N.Saito, S.Nagaoka, Y.Shimizu, H.Ohashi, Y.Tamenori: "Resonant Auger Spectra of Kr near the L3 Threshold"Surf. Rev. Lett. 9・1. 85-88 (2002)

[文献書誌] Y.Tamenori, K.Okada, S.Nagaoka, T.Ibuki, S.Tanimoto, Y.Shimizu, A.Fujii, Y.Haga, H.Yoshida, H.Ohashi, I.H.Suzuki: "A Study on Multi-Charged Xe Ions Formed through 3d Hole Stales Using a Coincidence Technique"J. Phys. B. 35・12. 2799-2809 (2002)

[文献書誌] S.Nagaoka, K.Mase, A.Nakamura, M.Nagao, J.Yoshinobu, S.Tanaka: "Site-Specific Fragmentation Caused by Core-Level Photoionization : Effect of Chemisorption"J. Chem. Phys. 117・8. 3961-3971 (2002)

[文献書誌] S.Tanaka, K.Mase, S.Nagaoka, M.Nagasono, M.Kamada: "Ion Desorption Induced by Core-Level Excitation of H2O/Si(100) : Evidence of Desorption due to the Multielectron Excitation/Decay"J. Chem. Phys. 117・9. 4479-4488 (2002)

[文献書誌] 長岡伸一: "内殻励起後のサイト選択的解離の研究"真空. (in press). (2003)

[文献書誌] K.Mase, M.Nagasono, S.Tanaka, T.Sekitani, S.Nagaoka: "Ion Desorption from Molecules Condensed at Low Temperature : A Study with Electron-Ion Coincidence Spectroscopy Combined with Synchrotron Radiation"Fizika Nizkikh Temperature ; Low Temperature Physics. (in press). (2003)

[文献書誌] J.Kanasaki: "Laser-induced electronic desorption of Si atoms from Si(111)-(7x7)"Physical Review B. 66・12. 125320 (2002)

[文献書誌] J.Kanasaki: "Primary Processes of Laser-Induced Selective Dimer-Layer Removal on Si(001)-(2x1)"Physical Review Letters. 89・25. 257601 (2002)

[文献書誌] J.Kanasaki: "Laser-induced electronic bond breaking and desorption on Si8001)-(2x1)"Surface Science. (in press). (2003)

[文献書誌] E.Inami: "Electronic bond rupture of Si atoms on Si(111)-(2x1)indnced by 1.16-eV photon excitation"Surface Science. (in press). (2003)

[文献書誌] T.Makimura, T.Mizuta, K.Murakami: "Laser Ablation Synthesis of Hydrogenerated Silicon nanoparticles with Green Photoluminescence in the Gas Phase"Jpn. J. Appl. Phys. 41・2A. 144-146 (2002)

[文献書誌] T.Mizuta, D.Takeuchi, Y.Kawaguchi, T.Makimura, K.Murakami: "Dynamics of Hydrogenation of Si Nanoparticles with Green Photoluminescence"Appl. Surface Science. 197-198. 574-576 (2002)

[文献書誌] C.Li, K.Kondo, T.Makimura, K.Murakami: "Fabrication of Er-doped Si nanocrystallites without Thermal Quenching"Appl. Surface Science. 197-198. 607-609 (2002)

[文献書誌] T.Makimura, Y.Yamamoto, S.Mitani, T.Mizuta, C.Li, D.Takeuchi, K.Murakami: "Functional Impurity Doping and Surface Modification of Si Nanocrystals"Appl. Surface Science. 197-198. 670-673 (2002)

[文献書誌] D.Takeuchi, T.Mizuta, T.Makimura, S.Yoshida, M.Fujita, K.Hata, H.Shigekawa, K.Murakami: "Desoprtion Dynamics of Previously Deposited Si Nanoparticles"Appl. Surface Science. 197-198. 674-678 (2002)

[文献書誌] K.Murakami, C.Li, K.Kondo, Y.Yamamoto, S.Mitani, T.Makimura: "Er and P Impurity Doping in Si Nanostructures Fabricated by Laser Ablation"Proc. SPIE. 4636. 67-75 (2002)

[文献書誌] Changquing Li, K.Kondo, T.Makimura, K.Murakami: "Increase of 1.5μm Luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO2 Films with Si Nanocrystallites by laser Ablation"Jpn. J. Appl. Phys. (in press). (2003)

[文献書誌] M.Fujii, A, Mimura, S.Hayashi, Y.Yamamoto, K.Murakami: "Hyperfine Structure of Electron Spin Resonance of Phosphorus Doped Si Nanocrystals"Phys. Rev. Letters. 89. 206805-1-206805-4 (2002)

[文献書誌] A.Uedono, T.Mori, K.Morisawa, K.Murakami, T.Ohdaira, R.Suzuki, T.Mikado, K.Ishioka, M.Kitajima, S.Hishita, H.Haneda, I.Sakaguchi: "Hydrogen-terminated Defects in Ion-Implanted Silicon probed by Monoenergetic Positron Beams"J. Appl. Phys. 93. 3228-3233 (2003)

[文献書誌] M.Ishikawa, M.Yoshimura, K.Ueda: "Carbon nanotube as a probe for friction force microscopy"Physica B : Condensed Matter. 323. 184-186 (2002)

[文献書誌] K.Ojima, M.Yoshimura, K.Ueda: "Structural and electronic property of barium silicide on Si(100)"Jpn. J. Appl. Phys.. 41・7B. 4965-4968 (2002)

[文献書誌] M.Ishikawa, M.Yoshimura, K.Ueda: "Simultaneous Measurement of Topography and Contact Current by Contact Mode AFM with Carbon Nanotube Probe"Jpn. J. Appl. Phys.. 41・7B. 4908-4910 (2002)

[文献書誌] K.Umezawa, T.Tatsuta, S.Nakanishi, K.Ojima, M.Yoshimura, K.Ueda, W.M.Gibson: "Surfactant-induced layer-by-layer of Ag on Cu(111) : ICISS and STM studies"Surface Science. (in press). (2003)

[文献書誌] T.Meguro, A.Hida, Y.Koguchi, H.Takai, K.Maeda, Y.Aoyagi: "Nanoscale Modification of Solid surfaces by Slow Highly Charged Ion Impact"Nuclear Instrum. Meth. B. (in press). (2003)

[文献書誌] A.Hida, T.Meguro, K.Maeda, Y.Aoyagi: "Analysis of Surface Reactions on Graphite Induced by Slow Highly Charged Ion Impacts"Nuclear Instrum. Meth. B. (in press). (2003)

[文献書誌] T.Meguro, A.Hida, Y.Koguchi, S.Miyamoto, Y.Yamamoto, H.Takai, K.Maeda, Y.Aoyagi: "Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation"Nuclear Instrum. Meth. B. 92・7. 3615-3619 (2003)

[文献書誌] T.Ishiyama, S.Nawae, T.Komai, Y.Yamashita, Y.Kamiura, T.Hasegawa, K.Inoue, K.Okuno: "Photoluminescence of Er in strained Si on SiGe layer"Journal of Applied Physics. 93・1. 134-138 (2002)

[文献書誌] Y.Yamashita, Y.Kamiura, I.Yamamoto, T.Ishiyama, Y.Sato: "Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon"Journal of Applied Physics. 93・1. 134-138 (2003)

[文献書誌] T.Uozumi, Y.Kayanuma: "Excited states of an electron-hole pair confined in spherical quantum dots and their optical properties"Phyts. Rev. B. 65・16. 165318-165329 (2002)

[文献書誌] K.Saito, Y.Kayanuma: "Nonadiabatic transition probabilities in the presence of strong dissipation at avoided level crossing point"Phys. Rev. A. 65. 033407-0334017 (2002)

[文献書誌] M.Yagi, Y.Kayanuma: "Theory for Carrier-Induced Ferromagnetism in Diluted MagneticSemiconductors"J. Phys. Soc. Jpn.. 71. 2010-2018 (2002)

[文献書誌] M.Fukaya, Y.Kayanuma, M.Itoh: "Lattice Relaxation of Outermost Core Holes in Auger-Free Luminescence of CsCl"J. Phys. Soc. Jpn.. 71. 2557-2565 (2002)

[文献書誌] T.Sato, Y.Kayanuma: "Quantum inelasticity in reflection of a composite particle"Europhys. Letters. 60. 331-336 (2002)

2002 年度実績報告書

前田康二東京大学, 大学院・工学系研究科, 教授 (10107443)