2001 年度実績報告書

人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

研究課題

研究課題/領域番号	11232201
研究機関	東北大学
研究代表者	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
研究分担者	栗野浩之東北大学, 大学院・工学研究科, 助教授 (70282093) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690) 小柳光正東北大学, 大学院・工学研究科, 教授 (60205531) 小野昭一アルプス電気(株), 最高技術顧問土屋敏章島根大学, 総合理工学部, 教授 (20304248)
キーワード	SiGe / SiGeC / MOS / HBT / CVD / 選択成長 / 不純物ドーピング / 高精度エッチング
研究概要	本研究では,人工IV族半導体超高速光・電子デバイスを開発することを目指し,Si-Ge(-C)系のIV族半導体極微細構造をデバイスに搭載した,極微細MOSFET,ヘテロバイポーラトランジスタ(HBT),Si/SiGe/Si-SOI構造の新デバイス等による低電圧・低消費電力・超高速・新機能付集積回路を設計し,それを表面・界面構造劣化の生じない低温高清浄プロセスを駆使して製作する技術を構築し,デバイス試作とその評価・デバイス物理の検討をとおして極微細化・超高速化の最適方法を明らかにしようとしている。本年度は5年計画の3年目として,原子精度制御プロセスの微細MOSFET製作への応用基盤技術を進展させるとともに,高品質SiGe(-C)エピタキシャル層をデバイスに導入したMOSFETおよびHBTを研究した。具体的には,高清浄CVDによる高品質Si-Ge(-C)系薄膜の低温選択エピタキシャル成長と高精度in-situ不純物ドーピングの実現およびデバイス適用,原子サイトに依存する原料ガス分子の吸着・反応定数およびIV族半導体原子制御プロセス条件の一覧表への集約,PとNの原子層繰り返しドーピングによる超高濃度不純物半導体の実現とそのデバイスへの応用,SiとSio_2の原子精度熱窒化及びプラズマ窒化制御の実現,siGeと不純物ドーピング材料の高精度エッチングの実現とその反応過程の解析,ゲート長0.1μmデバイスのCMOS構成の実現等を行った。また,レーザーアニールを用いた原子層吸着拡散法の開発,0.02μnのゲート加工,多結晶SiGe中でのキャリア生成モデルの提案,SiGeチャネルpMOSFETでの優れた低周波雑音特性の実証も行った。これらにより,MOSFETのソース/ドレイン部,チャネル部,ゲート部の全主要部分へのSiGe(-C)系のIV族半導体の適用の有効性が明らかになった。

研究成果

(33件)

すべてその他

すべて文献書誌 (33件)

[文献書誌] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A.. Vol.19, No.4, Part II. 1907-1911 (2001)
[文献書誌] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys.. Vol.40, Part 1. 2697-2700 (2001)
[文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148, No.8. G420-G423 (2001)
[文献書誌] 室田淳一他.: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)
[文献書誌] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH3 and SiH_4"J. Phys. IV France.. Vol.11, Pr3. 255-260 (2001)
[文献書誌] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40, Part 1. 5290-5293 (2001)
[文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B.. Vol.89, Issues 1-3. 120-124 (2002)
[文献書誌] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"Materials Science and Engineering B. Vol.89. 129-132 (2002)
[文献書誌] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"Jpn. J. Appl. Phys.. (to be published). (2002)
[文献書誌] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Allernaick Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France. D-X,3 (2001)
[文献書誌] F.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)
[文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. DV/P20 (2001)
[文献書誌] A.Tobioka et al.: "Study on Solid Phase Reaction in Ti/p^+-Si_<1-x>Ge_xC_y/Si Contacts"2001 Spring Meeting, The European Materials Research Society. D-XIII/P1 (2001)
[文献書誌] J.Murota et al.: "Atomically Precise Control of Heterointer faces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)
[文献書誌] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)
[文献書誌] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)
[文献書誌] O.Jintsugawa et al.: "Thermal Nitridation of Ulirathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)
[文献書誌] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
[文献書誌] T.Tsuchiya et al.: "Exploration of SiGe/Si Heterostructure Interface in SiGe-Channel MOSFETs (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 575-579 (2001)
[文献書誌] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
[文献書誌] Y.Hashiba: "Growth Characteristics of Si_<1-x>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
[文献書誌] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)
[文献書誌] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)
[文献書誌] Y.C.jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)
[文献書誌] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)
[文献書誌] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"E-MRS Spring Meeting. D-V/P22 (2001)
[文献書誌] M.Miyao et al.: "Post-annealing behavior of in-situ doped Poly-SiGe on SiON"The 13th International Conference on Crystal Growth (ICCG13). 31p-S13-04 (2001)
[文献書誌] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"International Conference on Solid State Devices and Materials. (2001)
[文献書誌] H.Choi et al.: "New SOI Flash Memory with Side Channel and Side Floating Gate"Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials. 246-247 (2001)
[文献書誌] H.Oh et al.: "Ultra-Shallow Junction Formed Using Laser Annealing for Sub-50nm MOS"Extended Abstracts of the Second International Workshop on Junction Technology. 95-98 (2001)
[文献書誌] 栗野浩之他: "レーザーアニールを用いた原子層吸着拡散"応用物理学会分科会シリコンテクノロジー. 8-31 (2001)
[文献書誌] K.Koh et al.: "Ultra-shallow Junction of SOI MOSFET with In-situ Elevated SiGe Source/Drain"Abstract model E-MRS 2001 Spring Meeting. D.27 (2001)
[文献書誌] T.Tsuchiya et al.: "Noise Characteristics in Floating-Body SOI MOSFETs"International Conf. on Solid State Devices and Materials. 272-273 (2001)

2001 年度 実績報告書

人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

研究代表者

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

研究成果

[文献書誌] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A.. Vol.19, No.4, Part II. 1907-1911 (2001)

[文献書誌] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys.. Vol.40, Part 1. 2697-2700 (2001)

[文献書誌] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148, No.8. G420-G423 (2001)

[文献書誌] 室田淳一 他.: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)

[文献書誌] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH3 and SiH_4"J. Phys. IV France.. Vol.11, Pr3. 255-260 (2001)

[文献書誌] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40, Part 1. 5290-5293 (2001)

[文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B.. Vol.89, Issues 1-3. 120-124 (2002)

[文献書誌] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"Materials Science and Engineering B. Vol.89. 129-132 (2002)

[文献書誌] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"Jpn. J. Appl. Phys.. (to be published). (2002)

[文献書誌] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Allernaick Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France. D-X,3 (2001)

[文献書誌] F.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)

[文献書誌] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. DV/P20 (2001)

[文献書誌] A.Tobioka et al.: "Study on Solid Phase Reaction in Ti/p^+-Si_<1-x>Ge_xC_y/Si Contacts"2001 Spring Meeting, The European Materials Research Society. D-XIII/P1 (2001)

[文献書誌] J.Murota et al.: "Atomically Precise Control of Heterointer faces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)

[文献書誌] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)

[文献書誌] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)

[文献書誌] O.Jintsugawa et al.: "Thermal Nitridation of Ulirathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)

[文献書誌] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

[文献書誌] T.Tsuchiya et al.: "Exploration of SiGe/Si Heterostructure Interface in SiGe-Channel MOSFETs (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 575-579 (2001)

[文献書誌] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

[文献書誌] Y.Hashiba: "Growth Characteristics of Si_<1-x>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

[文献書誌] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)

[文献書誌] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)

[文献書誌] Y.C.jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)

[文献書誌] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)

[文献書誌] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"E-MRS Spring Meeting. D-V/P22 (2001)

[文献書誌] M.Miyao et al.: "Post-annealing behavior of in-situ doped Poly-SiGe on SiON"The 13th International Conference on Crystal Growth (ICCG13). 31p-S13-04 (2001)

[文献書誌] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"International Conference on Solid State Devices and Materials. (2001)

[文献書誌] H.Choi et al.: "New SOI Flash Memory with Side Channel and Side Floating Gate"Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials. 246-247 (2001)

[文献書誌] H.Oh et al.: "Ultra-Shallow Junction Formed Using Laser Annealing for Sub-50nm MOS"Extended Abstracts of the Second International Workshop on Junction Technology. 95-98 (2001)

[文献書誌] 栗野浩之 他: "レーザーアニールを用いた原子層吸着拡散"応用物理学会分科会シリコンテクノロジー. 8-31 (2001)

[文献書誌] K.Koh et al.: "Ultra-shallow Junction of SOI MOSFET with In-situ Elevated SiGe Source/Drain"Abstract model E-MRS 2001 Spring Meeting. D.27 (2001)

[文献書誌] T.Tsuchiya et al.: "Noise Characteristics in Floating-Body SOI MOSFETs"International Conf. on Solid State Devices and Materials. 272-273 (2001)

2001 年度実績報告書

室田淳一東北大学, 電気通信研究所, 教授 (70182144)

[文献書誌] 室田淳一他.: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)

[文献書誌] 栗野浩之他: "レーザーアニールを用いた原子層吸着拡散"応用物理学会分科会シリコンテクノロジー. 8-31 (2001)