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[文献書誌] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf Interface Anal.. Vol.34. 423-431 (2002)
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[文献書誌] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)
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[文献書誌] 栗野浩之 他: "ウェーハレベル3次元集積化技術"表面技術. 第53巻 第4号. 228-232 (2002)
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[文献書誌] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)
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[文献書誌] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs.No.402 (2002)
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[文献書誌] T.Yamazaki et al.: "Double-Polysilicon Self-Aligned HBT with Non-Selective Epitaxial SiGe : C Base Layer"2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices. (2002)
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[文献書誌] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in NanoTechnology" International Conference (TNT2002). 377 (2002)
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[文献書誌] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. Abs.No.53 (2002)
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[文献書誌] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials (SSDM 2002). 764-765 (2002)
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[文献書誌] JeoungChill Shim et al.: "Novel Nickel Silicide Formation Technique For Sub-50nm MOS Device Application"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 434-435 (2002)
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[文献書誌] Y.Yamada et al.: "Silicon-On-Low-K Substrate (SOLK) Technology For High-Speed And Low-Power Devices"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 794-795 (2002)
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[文献書誌] T.Tsuchiya et al.: "Evaluation of Interface-Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs"32nd European Solid-State Device Research Conference (ESSDERC 2002). 239-242 (2002)
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[文献書誌] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM 2003). 17-18 (2003)
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[文献書誌] T.Sakai et al.: "A Proposal of Multi-Layer Channel MOSFET : The Application of Selective Etching for Si/SiGe Stacked Layers"First International SiGe Technology and Device Meeting (ISTDM 2003). 31-32 (2003)
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[文献書誌] S.Takagi et al.: "Fabrication and Device Characteristics of Strained-Si-On-Insulator (Strained-SOI) CMOS"First International SiGe Technology and Device Meeting (ISTDM 2003). 269-270 (2003)
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[文献書誌] H.Kanno et al.: "Ge dependent morphological change in poly-SiGe formed by Ni-mediated crystallization"First International SiGe Technology and Device Meeting (ISTDM 2003). 183-185 (2003)
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[文献書誌] J.Noh et al.: "Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM 2003). 165-166 (2003)
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[文献書誌] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003). 181-182 (2003)
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[文献書誌] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM 2003). 243-244 (2003)
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[文献書誌] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003). 247-248 (2003)
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[文献書誌] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)
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[文献書誌] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)
