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[文献書誌] 小田俊理: "21世紀の単電子デバイス"電気学会論文誌C. 121-C(1). 19-22 (2001)
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[文献書誌] K.Nishiguchi, S.Oda: "A self-aligned two-gate single-electron transistor derived from 0.12μm lithography"Applied Physics Letters. 78(14). 2070-2072 (2001)
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[文献書誌] B. J. Hinds, T.Yamanaka, S.Oda: "Charge Storage Mechanism in Nano-Crystalline Si Based Single Electron Memories"Materials Research Society Symposium Proceedings. 638. F2.2.1-F2.2.6 (2001)
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[文献書誌] J. Omachi, R.Nakamura, K.Nishiguchi, S.Oda: "Retardation in the oxidation rate of nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. 638. F5.3.1-F5.3.6 (2001)
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[文献書誌] K.Nishiguchi, X.Zhao, S.Oda: "Fabrication and characterization of cold electron emitter based on nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. 638. F.5.91-F5.9.6 (2001)
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[文献書誌] K.Arai, J.Omachi, K.Nishiguchi, S. Oda: "Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. 664. A20.6.1-A20.6.6 (2001)
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[文献書誌] S.Oda, K.Nishiguchi: "Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition"Journal de Physique IV. 11(Pr.3). 1065-1071 (2001)
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[文献書誌] B. J. Hinds, T.Yamanaka, S.Oda: "Emission Lifetime of Polarizable Charge Stored in Nano-Crystalline Si Based Single Electron Memory"Journal of Applied Physics. 90(12). 6402-6408 (2001)
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[文献書誌] K.Nishiguchi, S.Oda: "Proceedings of the 25th International Conference on the Physics of Semiconductors"Springer, Berlin. 1037-1038 (2001)
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[文献書誌] S.Oda: "APPC 2000, Electron transport in silicon nanodevices"World Scientific, Singapore. 67-72 (2001)