2000 年度実績報告書

単分散超微細ナノ結晶シリコンの作製と配分制御

研究課題

研究課題/領域番号	11450008
研究機関	東京工業大学
研究代表者	小田俊理東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)
研究分担者	畑谷成郎東京工業大学, 量子効果エレクトロニクス研究センター, 助手 (90302942)
キーワード	ナノ結晶シリコン / プラズマCVD / 量子ドット / ストレス下の酸化 / 透過型電子顕微鏡観察 / フォトルミネッセンス / リンガラス低温融解 / 電子放出素子
研究概要	1.パルスプラズマプロセスで形成したナノ結晶の酸素中熱処理において表面酸化機構のストレス効果を調べた。透過型電子顕微鏡観測により酸化処理前後のナノ結晶粒径とその分布を調べた。粒径10nmレベルのナノ結晶では、酸化時間の経過に従い酸化速度が低減し、やがて飽和することを見いだした。4nmのナノ結晶を作製できた。量子ドット表面酸化膜によるストレスのもとで酸化機構をモデル化し実験結果をうまく説明できた。 2.表面酸化膜を有するシリコンナノ結晶のフォトルミネッセンスを測定し、結晶粒径減少に伴うブルーシフトとストレスによるレッドシフトを観察した。電子顕微鏡観察と合わせてナノ結晶シリコンの酸化機構を解明した。 3.粒径10nmのナノ結晶シリコンを3-4層シリコン基板上に堆積してからリンを含む雰囲気でアニールする事により、表面酸化膜を1100℃で融解し、ナノ結晶シリコンを再配列させた。薄い金薄膜を蒸着して電子放出特性を測定したところ、4.5%という高効率の電子放出を観測した。ナノ結晶シリコンを高密度に集積し、酸化膜厚を低減化して表面を平坦化した結果、効果的に電界を加えることが出来たものと考えられる。

研究成果

(30件)

すべてその他

すべて文献書誌 (30件)

[文献書誌] K.Nishiguchi,S.Hara,T.Amano,S.Hatatani and S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates"Materials Research Society Symposium Proceedings. 571. 43-48 (2000)
[文献書誌] F.Yun,B.J.Hinds,S.Hatatani,S.Oda,Q.X.Zhao and M.Willander: "Study of Structural and Optical Properties of Nanocrystalline Silicon Embedded in SIO2"Thin Solid Films. 375(1-2). 137-141 (2000)
[文献書誌] A.Dutta,S.P.Lee,Y.Hayafune and S.Oda: "Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices"Journal of Vacuum Science and Technology. 18(6). 2857-2861 (2000)
[文献書誌] K.Nishiguchi and S.Oda: "Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate"Applied Physics Letters. 76(20). 2922-2924 (2000)
[文献書誌] Y.Fu,M.Willander,A.Dutta and S.Oda: "Carrier conduction in Si-nanocrystal-based single electron transistor-I.Effect of a gate bias"Superlattices and Microstructures. 28(3). 177-187 (2000)
[文献書誌] A.Dutta,S.Oda,Y.Fu and M.Willander: "Electron Transport in Nanocrystalline-Si Based Single Electron Transistors"Japanese Journal of Applied Physics. 39(7B). 4647-4650 (2000)
[文献書誌] B.J.Hinds,k.Nishiguchi,A.Dutta,T.Yamanaka,S.Hatatani and S.Oda: "Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channeland Nanocrystalline Si memory Device"Japanese Journal of Applied Physics. 39(7B). 4637-4641 (2000)
[文献書誌] K.Nishiguchi and S.Oda: "Electron transport in a single silicon quantum structure using a vertical silicon probe"Journal of Applied Physics. 88(7). 4186-4190 (2000)
[文献書誌] K.Nishiguchi and S.Oda: "Ballistic transport in a silicon vertical transistor"Silicon Nanoelectrics Workshop. 32-33 (2000)
[文献書誌] K.Nishiguchi and S.Oda: "Electron transport in a single silicon quantum dot structure using a vertical silicon probe"Device Research Conference. 79-80 (2000)
[文献書誌] F.Yun,B.J.Hinds,S.Hatatani and S.Oda: "Room temperature single-electron narrow channel memory with silicon nanodots embeddedin SiO2 matrix"Japanese Journal of Applied Physics. 39(8A). L792-L795 (2000)
[文献書誌] B.J.Hinds,A.Dutta,T.Yamanaka,S.Hatatani and S.Oda: "Lifetime measurements of electrons stored nano-crystalline Si single electron memory devices"Silicon Nanoelectrics Workshop. 75-76 (2000)
[文献書誌] B.J.Hinds,A.Dutta,F.Yun,T.Yamanaka,S.Hatatani and S.Oda: "Single electron memory utilizing nano-crystalline Si over short channel silicon-on-insulator transistors"Device Research Conference. 151-152 (2000)
[文献書誌] Shunri Oda,Amit Dutta,katsuhiko Nishiguchi,Bruce J.Hinds,X.Zhao and Shigeo Hatatani: "Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices"International Symposium on Formation, Physics and Device Application of Quantum Dot Structres. 8 (2000)
[文献書誌] Bruce J.Hinds,Amit Dutta,Takayuki Yamanaka,Shigeo Hatatani and Shunri Oda: "Nano-Crystalline Si as Floating Gate Node for Single Electron memory Devices"International Symposium on Formation,Physics and Device Application of Quantum Dot Structres. 114 (2000)
[文献書誌] Amit Dutta,Yoshinori Hayafune and Shunri Oda: "Single Electron Memory Devices Based on Plasma Derived Silicon Nanocrystals"Japanese Journal of Applied Physics. 39(8B). L855-L857 (2001)
[文献書誌] S.Oda: "Electron transport in silicon nanodevices"World Scientific. (in press). (2001)
[文献書誌] Y.Fu,M.Willander,A.Dutta and S.Oda: "Carrier conduction in Si-nanocrystal-based single electron transistor-II.Effect of a drain bias"Superlattices and Microstructures. 28(3). 189-198 (2000)
[文献書誌] K.Nishiguchi and S.Oda: "Single-Electron Transistors with Two Self-Aligned Gates"Solid State Devices and Materials Conference, Extended Abstracts. 116-117 (2000)
[文献書誌] 小田俊理: "21世紀の単電子デバイス"電気学会論文誌C. 121-C(1). 19-22 (2001)
[文献書誌] K.Nishiguchi and S.Oda: "Ballistic transport under magnetic field in silicon vertical transistors"Proceedings of the 25th International Conference on the Physics of Semiconductors (Springer). (in press). (2001)
[文献書誌] K.Nishiguchi,X.Zhao and S.Oda: "Fabrication and characterization of nanocrystalline silicon electron emitter"Proceedings of the 25th International Conference on the Physics of Semiconductors (Springer). (in press). (2001)
[文献書誌] S.Oda: "Silicon Nanodevices and Neosilicon"10th Seoul International Symposium on the Physics of Semiconductor and Applications-2000. 60 (2000)
[文献書誌] S.Oda: "Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition"EUROCVD-13. (in press). (2001)
[文献書誌] K.Nishiguchi and S.Oda: "Ballistic transport in silicon vertical transistors"4th International Workshop on Quantum Functional Devices. 56-59 (2000)
[文献書誌] K.Nishiguchi and S.Oda: "A self-alligned two-gate single-electron transistor derived from0.12μm lithography"Applied Physics Letters. 78(14)(in press). (2001)
[文献書誌] K.Arai,J.Omachi,K.Nishiguchi and S.Oda: "Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots"MRS Spring Meeting. (in press). (2001)
[文献書誌] B.J.Hinds,T.Yamanaka and S.Oda: "Charge Storage Mechanismin Nano-Crystalline Si Based Single Electron Memories"Materials Research Society Symposium Proceedings. (in press). (2001)
[文献書誌] J.Omachi,R.Nakamura,K.Nishiguchi and S.Oda: "Retardation in the oxidation rate of nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. (in press). (2001)
[文献書誌] K.Nishiguchi,X.Zhao and S.Oda: "Fabrication and characterization of cold electron emitter based on nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. (in press). (2001)

2000 年度 実績報告書

単分散超微細ナノ結晶シリコンの作製と配分制御

研究代表者

小田 俊理 東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)

研究成果

[文献書誌] K.Nishiguchi,S.Hara,T.Amano,S.Hatatani and S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates"Materials Research Society Symposium Proceedings. 571. 43-48 (2000)

[文献書誌] F.Yun,B.J.Hinds,S.Hatatani,S.Oda,Q.X.Zhao and M.Willander: "Study of Structural and Optical Properties of Nanocrystalline Silicon Embedded in SIO2"Thin Solid Films. 375(1-2). 137-141 (2000)

[文献書誌] A.Dutta,S.P.Lee,Y.Hayafune and S.Oda: "Electron-Beam Direct-Writing using RD2000N for Fabrication of Nano-Devices"Journal of Vacuum Science and Technology. 18(6). 2857-2861 (2000)

[文献書誌] K.Nishiguchi and S.Oda: "Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate"Applied Physics Letters. 76(20). 2922-2924 (2000)

[文献書誌] Y.Fu,M.Willander,A.Dutta and S.Oda: "Carrier conduction in Si-nanocrystal-based single electron transistor-I.Effect of a gate bias"Superlattices and Microstructures. 28(3). 177-187 (2000)

[文献書誌] A.Dutta,S.Oda,Y.Fu and M.Willander: "Electron Transport in Nanocrystalline-Si Based Single Electron Transistors"Japanese Journal of Applied Physics. 39(7B). 4647-4650 (2000)

[文献書誌] B.J.Hinds,k.Nishiguchi,A.Dutta,T.Yamanaka,S.Hatatani and S.Oda: "Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channeland Nanocrystalline Si memory Device"Japanese Journal of Applied Physics. 39(7B). 4637-4641 (2000)

[文献書誌] K.Nishiguchi and S.Oda: "Electron transport in a single silicon quantum structure using a vertical silicon probe"Journal of Applied Physics. 88(7). 4186-4190 (2000)

[文献書誌] K.Nishiguchi and S.Oda: "Ballistic transport in a silicon vertical transistor"Silicon Nanoelectrics Workshop. 32-33 (2000)

[文献書誌] K.Nishiguchi and S.Oda: "Electron transport in a single silicon quantum dot structure using a vertical silicon probe"Device Research Conference. 79-80 (2000)

[文献書誌] F.Yun,B.J.Hinds,S.Hatatani and S.Oda: "Room temperature single-electron narrow channel memory with silicon nanodots embeddedin SiO2 matrix"Japanese Journal of Applied Physics. 39(8A). L792-L795 (2000)

[文献書誌] B.J.Hinds,A.Dutta,T.Yamanaka,S.Hatatani and S.Oda: "Lifetime measurements of electrons stored nano-crystalline Si single electron memory devices"Silicon Nanoelectrics Workshop. 75-76 (2000)

[文献書誌] B.J.Hinds,A.Dutta,F.Yun,T.Yamanaka,S.Hatatani and S.Oda: "Single electron memory utilizing nano-crystalline Si over short channel silicon-on-insulator transistors"Device Research Conference. 151-152 (2000)

[文献書誌] Shunri Oda,Amit Dutta,katsuhiko Nishiguchi,Bruce J.Hinds,X.Zhao and Shigeo Hatatani: "Single Electron Tunneling and Ballistic Transport in Silicon Nanodevices"International Symposium on Formation, Physics and Device Application of Quantum Dot Structres. 8 (2000)

[文献書誌] Bruce J.Hinds,Amit Dutta,Takayuki Yamanaka,Shigeo Hatatani and Shunri Oda: "Nano-Crystalline Si as Floating Gate Node for Single Electron memory Devices"International Symposium on Formation,Physics and Device Application of Quantum Dot Structres. 114 (2000)

[文献書誌] Amit Dutta,Yoshinori Hayafune and Shunri Oda: "Single Electron Memory Devices Based on Plasma Derived Silicon Nanocrystals"Japanese Journal of Applied Physics. 39(8B). L855-L857 (2001)

[文献書誌] S.Oda: "Electron transport in silicon nanodevices"World Scientific. (in press). (2001)

[文献書誌] Y.Fu,M.Willander,A.Dutta and S.Oda: "Carrier conduction in Si-nanocrystal-based single electron transistor-II.Effect of a drain bias"Superlattices and Microstructures. 28(3). 189-198 (2000)

[文献書誌] K.Nishiguchi and S.Oda: "Single-Electron Transistors with Two Self-Aligned Gates"Solid State Devices and Materials Conference, Extended Abstracts. 116-117 (2000)

[文献書誌] 小田俊理: "21世紀の単電子デバイス"電気学会論文誌C. 121-C(1). 19-22 (2001)

[文献書誌] K.Nishiguchi and S.Oda: "Ballistic transport under magnetic field in silicon vertical transistors"Proceedings of the 25th International Conference on the Physics of Semiconductors (Springer). (in press). (2001)

[文献書誌] K.Nishiguchi,X.Zhao and S.Oda: "Fabrication and characterization of nanocrystalline silicon electron emitter"Proceedings of the 25th International Conference on the Physics of Semiconductors (Springer). (in press). (2001)

[文献書誌] S.Oda: "Silicon Nanodevices and Neosilicon"10th Seoul International Symposium on the Physics of Semiconductor and Applications-2000. 60 (2000)

[文献書誌] S.Oda: "Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition"EUROCVD-13. (in press). (2001)

[文献書誌] K.Nishiguchi and S.Oda: "Ballistic transport in silicon vertical transistors"4th International Workshop on Quantum Functional Devices. 56-59 (2000)

[文献書誌] K.Nishiguchi and S.Oda: "A self-alligned two-gate single-electron transistor derived from0.12μm lithography"Applied Physics Letters. 78(14)(in press). (2001)

[文献書誌] K.Arai,J.Omachi,K.Nishiguchi and S.Oda: "Photoluminescence study of the self-limiting oxidation in nanocrystalline silicon quantum dots"MRS Spring Meeting. (in press). (2001)

[文献書誌] B.J.Hinds,T.Yamanaka and S.Oda: "Charge Storage Mechanismin Nano-Crystalline Si Based Single Electron Memories"Materials Research Society Symposium Proceedings. (in press). (2001)

[文献書誌] J.Omachi,R.Nakamura,K.Nishiguchi and S.Oda: "Retardation in the oxidation rate of nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. (in press). (2001)

[文献書誌] K.Nishiguchi,X.Zhao and S.Oda: "Fabrication and characterization of cold electron emitter based on nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. (in press). (2001)

2000 年度実績報告書

小田俊理東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)