-
[文献書誌] Y.Furukawa, H.Yonezu, K.Ojima, K.Samonji, Y.Fujimoto, K.Momose, K.Aiki: "Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice-Matched to Si(100)Substrate"Jpn.J.Appl.Phys.. Vol.41・No.2A. 528-532 (2002)
-
[文献書誌] Y.Fujimoto, H.Yonezu, A.Utsumi, K.Momose, Y.Furukawa: "Dislocation-Free GaAs_yP_<1-x-y>N_x/GaP_<0.98>N_<0.02> Quantum-Well Structure Lattice-Matched to a Si Substrate"Appl.Phys.Lett.. Vol.79・No.9. 1306-1308 (2001)
-
[文献書誌] K.Momose, H.Yonezu, Y.Fujimoto, Y.Furukawa, Y.Motomura, K.AIki: "Dislocation-Free and Lattice-Matched Si/GaP_<1-x>N_x/Si Structure for Photo-Electronic Integrated Systems"Appl.Phys.Lett.. Vol.79・No.25. 4151-4153 (2001)
-
[文献書誌] Y.Fujimoto, H.Yonezu, K.Momose, A.Utsumi, Y.Furukawa: "Control of Growth Process and Dislocation Generation of GaAs_<1-x>N_x Grown bv All-Solid-Source Molecular Beam Epitaxy"J.Cryst.Growth. Vol.227/228. 491-495 (2001)
-
[文献書誌] V.H.Mendez-Garcia, A.P.Centeno, M.Lopez-Lopez, M.Tamura, K.Momose, K.Ojima, H.Yonezu: "Improvement in the Crystal of ZnSe Films on Si(111)Substrate with a Nitrogen Surface Treatment"Thin Solid Films. Vol.373. 33-36 (2000)
-
[文献書誌] Y.Fujimoto, H.Yonezu, S.Irino, K.Samonji, K.Momose, N.Ohshima: "A High Quality GaAs_xP_<1-x>/In_<0.13>Ga_<0.87>P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations"Jpn.J.Appl.Phys.. Vol.38・No.12A. 6645-6649 (1999)