2000 年度実績報告書

III族窒化物半導体気相成長における応力制御による転位低減とその場観察法の確立

研究課題

研究課題/領域番号	11450131
研究機関	名城大学
研究代表者	天野浩名城大学, 理工学部, 助教授 (60202694)
研究分担者	赤崎勇名城大学, 理工学部, 教授 (20144115)
キーワード	III族窒化物半導体 / 貫通転位密度 / 応力 / 有機金属化合物気相成長法 / 透過電子顕微鏡 / 鏡像効果 / AlGaN
研究概要	本申請者等が1986年に開発し、現在では世界標準となっている低温堆積緩衝層を用いたサファイア上へのGaNの成長において問題となっている高密度貫通転位の構造・特性の理解とその低減のため、成長中に意識的に応力を印加し、貫通転位の振舞いを観察してその機構を明らかにすることを目的とした。最終年度である本年度は、昨年度の結果を更に発展させ、(1)GaNのトレンチ構造のみならず、サファイア基板やその他の基板についてもトレンチ構造を形成し、その際に生じる応力分布と転位の挙動を調べること、及び(2)部分的応力印下をGaNだけではなくAlGaNにも適用し、転位挙動の差異等について透過電子顕微鏡を用いて詳しく検討した。 (1)に関しては、サファイア基板のトレンチ構造についても、昨年度見出した横方向応力による転位の屈曲が効率的に生じ、トレンチ上で低転位密度GaNを得ることに成功した。本手法は、従来の横方向成長技術と異なり、一回の成長で低転位部分の成長が可能である点で、初期の目的以上の成果といえる。更にシリコン基板やSiC基板上のトレンチ構造についても、サファイア基板上と同様に低転位化が可能であることが分かった。特に、シリコンやSiC基板では、従来問題であった熱応力によるクラック発生が抑制される事が分かり、これも初期の目的以上の成果といえる。 (2)に関しては、クラック抑制のため低温堆積AlN中間層とGaNのトレンチ構造を併用した。AlGaNの場合もGaNと同様、横方向の応力印加により低転位化できることが分かった。AlNモル分率0.25のAlGaNでトレンチ上部での転位密度は10^6cm^<-2>程度であり、GaNの横方向成長と遜色ない。一方、GaとAlの拡散場での振る舞いに違いより、トレンチとテラス上部で混晶組成が異なってしまうという新たな現象も見出された。これは、局所的歪場が極めて複雑になることを意味しており、AlGaNの更なる低転位化のための課題が明らかとなった。

研究成果

(31件)

すべてその他

すべて文献書誌 (31件)

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)
[文献書誌] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)
[文献書誌] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)
[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGal-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)
[文献書誌] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)
[文献書誌] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)
[文献書誌] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond Res.. 5S1. W6.8 (2000)
[文献書誌] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)
[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)
[文献書誌] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"Physical Review-Series B-. 62. R10607-10609 (2000)
[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)
[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)
[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)
[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)
[文献書誌] S.Nitta,M.Kariya,T.Kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)
[文献書誌] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)
[文献書誌] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)
[文献書誌] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)
[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)
[文献書誌] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada,: "Electrical conductivity of low temperature deposited A10.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)
[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)
[文献書誌] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)
[文献書誌] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)
[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)
[文献書誌] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)
[文献書誌] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)
[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)
[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)
[文献書誌] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)
[文献書誌] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)
[文献書誌] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

2000 年度 実績報告書

III族窒化物半導体気相成長における応力制御による転位低減とその場観察法の確立

研究代表者

天野 浩 名城大学, 理工学部, 助教授 (60202694)

研究成果

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

[文献書誌] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

[文献書誌] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)

[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGal-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)

[文献書誌] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport, Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

[文献書誌] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

[文献書誌] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond Res.. 5S1. W6.8 (2000)

[文献書誌] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

[文献書誌] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic-resonance study"Physical Review-Series B-. 62. R10607-10609 (2000)

[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

[文献書誌] S.Nitta,M.Kariya,T.Kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

[文献書誌] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

[文献書誌] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

[文献書誌] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

[文献書誌] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada,: "Electrical conductivity of low temperature deposited A10.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)

[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

[文献書誌] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

[文献書誌] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13 305 (2000)

[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

[文献書誌] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

[文献書誌] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

[文献書誌] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

[文献書誌] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

[文献書誌] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

2000 年度実績報告書

天野浩名城大学, 理工学部, 助教授 (60202694)