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[文献書誌] W.Saitoh: "Analysis of short-channel schottky source/drain metal- oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type"Japanese Journal of Applied Physics. 38. 6226-6231 (1999)
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[文献書誌] M.Tsutsui: "Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy"Japanese Journal of Applied Physics. 38. L920-L922 (1999)
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[文献書誌] W.Saitoh: ""35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate""Japanese Journal of Applied Physics. 38. L629-L631 (1999)
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[文献書誌] Y.Oguma: ""Terahertz response with dradual change from square-law detection to photon-assisted tunneling in tripple-barrier resnant tunneling diodes""Japanese Journal of Applied Physics. 38. L717-L719 (1999)
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[文献書誌] M.Asada: ""Estimation of THz gain due to interwell transition by the measurement of detection properties of triple-barrier resonant tunneling diodes""Int.Conf.On Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11). MoB-1 (1999)
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[文献書誌] Y.Oguma: ""Observation of gradual change from square-law detection to photon-assisted tunneling in THz response of triple-barrier resonant tunneling diodes""Int.Conf.on Modulated Semiconductor Structures (MSS9). G03 (1999)