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[文献書誌] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J. Appl. Phys. 86,10. 5480-5483 (1999)
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[文献書誌] Y.shimamune et al.: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl. Surf. Sci.. (in press). (2000)
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[文献書誌] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).
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[文献書誌] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. (accepted).
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[文献書誌] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).
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[文献書誌] H.Takeuchi et al.: "Etching of Si_<1-x>Ge_x Epitaxial Films Using an ECR Chlorine Plasma"Abs. Of 1999 Spring Meeting, The European Materials Research Society. (D-III .2). (1999)
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[文献書誌] S.Ishida et al.: "Micro-Roughness Control of the Si_<1-x>Ge_x Surfaces Treated with Buffered Hydrofluoric Acid"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. PI-2 (1999)
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[文献書誌] J.Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices"Proc. Of the SPIE Conference on Microelectronic Device Technology III. 3881. 33-45 (1999)
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[文献書誌] J.Murota et al.: "SiGe Processing and its Applicaton to MOS Devices"Abs. Of the 1st Microelectronics Workshop. 30-31 (1999)
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[文献書誌] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext. Abs. Of 18th Symposium on Future Electron Devices. 65-70 (1999)
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[文献書誌] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc. Of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
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[文献書誌] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc. Of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)
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[文献書誌] B.Tillack et al.: "Atomic Layer Doping of SiGe-Fundamentals and Device Applications"Abs. Of Int.Joint Conf. On Si Epitaxy and Heterostructures. E-5 (1999)
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[文献書誌] D.Knoll et al.: "Comparison of SiGe and SiGe: C Heterojunction Bipolar Transistors"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-2 (1999)
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[文献書誌] B.Heinemann et al.: "Comparative Analysis of Minority Carrier Ttransport in npn Bipolar Transistors with Si, Si_<1-x>Ge_x, and Si_<1-y>C_y Base Layers"Abs. Of Int. Joint Conf. On Si Epitaxy and Heterostructures. J-3 (1999)
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[文献書誌] J.Murota et al.: "Future Trends in Microelectronics Process Technology for Sub-0.1μm Silicon Devices, pp.79-90)"John Wiley & Sons,Inc.. 12 (1999)
