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[文献書誌] D.Sugihara et al.: "High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by RF-molecular beam epitaxy"Japanese Journal of Applied Physics. 39・3A/B. L197-L199 (2000)
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[文献書誌] A.Kikuchi et al.: "Improvement of crystal quality of RF-molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediate layers"Japanese Journal of Applied Physics. 39・4B. L330-L333 (2000)
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[文献書誌] D.Sugihara et al.: "Suppression of inversion domains and decrease of threading dislocations in migration enhanced epitaxial GaN by RF-molecular beam epitaxy"physica status solidi (a). 180. 65-71 (2000)
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[文献書誌] K.Kusakabe et al.: "Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy"Japanese Journal of Applied Physics. 40・3A. L192-L194 (2001)
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[文献書誌] A.Kikuchi et al.: "Improvement of electrical property and surface morphology of GaN grown by RF-molecular beam epitaxy by introduction of multiple AlN intermediate layer"Materials Science & Engineering B. (2001)
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[文献書誌] A.Kikuchi et al.: "Reduction of threading dislocations in RF-MBE grown polarity controlled GaN by AlN multiple interlayers"IPAP Conference Series 1, Proceedings of International Workshop on Nitride Semiconductors. 154-157 (2001)
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[文献書誌] Y.Toyoura et al.: "GaN-based resonant cavity-enhanced UV-photodetectors"IPAP Conference Series 1, Proceedings of International Workshop on Nitride Semiconductors. 907-910 (2001)
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[文献書誌] K.Kusakabe et al.: "Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer"Journal of Crystal Growth. (2001)
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[文献書誌] K.Kusakabe et al.: "Step flow surface morphology in plasma assisted molecular beam epitaxy grown GaN"Materials Research Society Internet Journal of Nitride Semiconductor Research. (2001)
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[文献書誌] K.Kusakabe et al.: "Quasi-free standing GaN epitaxial layer grown on nano-columnar by RF-molecular beam epitaxy"Proceedings of International Symposium on Compound Semiconductors 2001. (2001)
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[文献書誌] 草部一秀: "RF-MBE法によるGaNのステップフロー成長"第61回応用物理学会学術講演会. 4a-Y-3 (2000)
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[文献書誌] 山田隆之: "RF-MBE成長GaNにおけるAlN多重中間層挿入による欠陥低減"第61回応用物理学会学術講演会. 4a-Y-4 (2000)
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[文献書誌] 草部一秀: "ナノコラムGaN上へのGaNのオーバーグロースにる残留歪の低減化"第61回応用物理学会学術講演会. 5a-Y-10 (2000)
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[文献書誌] 豊浦洋祐: "GaN共振型紫外線受光素子の基礎研究"第61回応用物理学会学術講演会. 7p-L-2 (2000)
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[文献書誌] 草部一秀: "ナノコラムGaN上へのオーバーグロースGaNのラマン測定"第48回応用物理学関係連合講演会. 29p-L-9 (2001)
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[文献書誌] 坂内亮: "RF-MBE法によるAlN/GaN共鳴トンネルダイオードの作製"第48回応用物理関係連合講演会. 31a-K-9 (2001)