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[文献書誌] K.Kodama, M.Takahashi, D.Ricinshi, A.I.Lerescu, M.Noda, M.Okuyama: "Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment"Japanese Journal of Applied Physics. 41, No.4B. 2639-2644 (2002)
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[文献書誌] M.Noda, T.Nakaiso, K.Takarabe, K.Kodama, M.Okuyama: "Preparation and Characterization of Bi_4Ti_3O_<12>-SrBi_4Ti_4O_<15> ferroelectric thin films by pulsed laser deposition"Journal of Crystal Growth. 237-239. 478-481 (2002)
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[文献書誌] M.Takahashi, K.Kodama, T.Nakaiso, M.Noda, M.Okuyama: "Effect of Leakage Current through Ferroelectric and Insulator on Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure"Integrated Ferroelectrics. 40. 125-134 (2001)
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[文献書誌] M.Takahashi, K.Kodama, M.Noda, P.Hedblom, A.Grishin, M.Okuyama: "Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film"Japanese Journal of Applied Physics. 41, No.11B. 6797-6802 (2002)
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[文献書誌] M.Okuyama, K.Kodama, M.Takahashi, M.Noda: "強誘電体ゲート電界効果トランジスタメモリーのための強誘電体-絶縁体-半導体構造"Ouyou Butsuri (in Japanese). 71, No.5. 566-570 (2002)
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[文献書誌] A.Shibuya, M.Noda, M.Okuyama, H.Fujisawa, M.Shimizu: "Natural-superlattice-structured Bi_4Ti_3O_<12>-SrBi_4Ti_4O_<15> ferroelectric thin films"Applied Physics Letters. 82, No.5. 784-786 (2003)
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[文献書誌] M.Noda, K.Kodama, S.Kitai, M.Takahashi T.Kanashima, M.Okuyama: "Basic Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using High-k PrO_x Insulator Layer"Journal of Applied Physics. (掲載予定). (2003)
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[文献書誌] M.Noda, K.Kodama, I.Ikeuchu, M.Takahashi, M.Okuyama: "A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-type Ferroelectric Memory by Rapid Thermal Annealing"Japanese Journal of Applied Physics. (掲載予定). (2003)
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[文献書誌] H.Funakubo, K.Tokita, T.Oikawa, M.Aratani, K.Saito: "Comparison of Crystal Structure and Electrical Properties of Tetragonal and Rhombohedral Pb(Zr, Ti)O_3 Films Prepared at Low Temperature bu Pulsed-Metalorganic Chemical Vapor Deposition"Journal of Applied Physics. 92, No.9. 5448-5452 (2002)