2000 年度実績報告書

マストランスポートIII族窒化物秩序化ゼロ次元構造の実現と緑色レーザダイオード

研究課題

研究課題/領域番号	12450017
研究機関	名城大学
研究代表者	赤崎勇名城大学, 理工学部, 教授 (20144115)
研究分担者	天野浩名城大学, 理工学部, 助教授 (60202694)
キーワード	III族窒化物半導体 / マストランスポート / レーザダイオード / 有機金属化合物気相成長法 / 緑色レーザダイオード / 低転位
研究概要	GaN系III族窒化物半導体の単結晶薄膜成長法は、サファイアを基板とする場合、本申請者のグループが1986年に開発した成長モード制御法が一般化している。この結晶成長法が基礎となり、青色〜緑色発光ダイオードが実用化し、紫外〜紫色レーザダイオードが実現したのは、周知の通りである。これら発光素子の活性層としてGaInNが用いられている。GaInNは成長表面における表面エネルギーの微妙な差によって、成長層には空間的な組成変調が生じる。この数十nmレベルの空間的な組成変調のうちInNモル分率の高い部分は電子正孔対を捉える、いわば自然ゼロ次元構造として働くため、同材料を用いた発光ダイオード中に高密度の貫通転位密度があっても発光効率が低下しないひとつの理由として考えられている。この自然組成変調構造は、発光ダイオードとしては極めて都合が良いが、組成に対する空間的コヒーレンシーが低下するため、利得幅が広く、最大利得が低下するために、レーザダイオードには大きなマイナスの要因として働いている。これが青色から更に長波長のレーザダイオードが、III族窒化物においていまだ実現していない理由の一つである。同材料の強い圧電性のため、電子正孔対が分離しInNモル分率の増加とともに再結合割合が低下することも理由として考えられている。本研究では、これらの実験事実に基づき、2年間かけて空間的コヒーレンシーに優れた組成変調構造、所謂秩序化ゼロ次元構造を実現することを第一目的とする。この実現のため、本研究グループが世界ではじめて見出したマストランスポート現象を応用する。本研究では更にこの技術をデバイスに応用し、高密度化することにより圧電性による損失を補い、緑色レーザダイオードを実現する。本年度は、トレンチ構造にGaInN系多重量子井戸構造を作製し、その発光特性を評価した。トレンチ方向、側面の形状等とInの取り込まれについて、現在のところ統一的に説明できるモデルを構築中である。実験遂行の過程で再成長界面の品質などの問題も明らかとなった。

研究成果

(31件)

すべてその他

すべて文献書誌 (31件)

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of(Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)
[文献書誌] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)
[文献書誌] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)
[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGal-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)
[文献書誌] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport,Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)
[文献書誌] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)
[文献書誌] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)
[文献書誌] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)
[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)
[文献書誌] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN:An optically detected magnetic-resonance study"Physical Review-Series B-. 62. R10607-10609 (2000)
[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)
[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)
[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)
[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)
[文献書誌] S.Nitta,M.Kariya,T.kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)
[文献書誌] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)
[文献書誌] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)
[文献書誌] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)
[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)
[文献書誌] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada: "Electrical conductivity of low temperature deposited A10.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)
[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)
[文献書誌] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)
[文献書誌] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13-305 (2000)
[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)
[文献書誌] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)
[文献書誌] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN:An optically detecte magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)
[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)
[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)
[文献書誌] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)
[文献書誌] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)
[文献書誌] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜-〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

2000 年度 実績報告書

マストランスポートIII族窒化物秩序化ゼロ次元構造の実現と緑色レーザダイオード

研究代表者

赤崎 勇 名城大学, 理工学部, 教授 (20144115)

研究成果

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano and I.Akasaki: "The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of(Al)GaN Grown by Metalorganic Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. 2385-2388 (2000)

[文献書誌] C.Wetzel,H.Amano and I.Akasaki: "Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design"Jpn.J.Appl.Phys.. 39. 2425-2427 (2000)

[文献書誌] C.Pernot,A.Hirano,M.Iwaya,T.Detchprohm,H.Amano and I.Akasaki: "Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes"Jpn.J.Appl.Phys.. 39. L387-389 (2000)

[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,T.Detchprohm,H.Amano,I.Akasaki,A.Hirano and C.Pernot: "High-Quality AlxGal-xN Using Low Temperature-Interlayer and its Application to UV Detector"MRS Internet J.Nitride Semicond.Res.. 5S1. W1.10 (2000)

[文献書誌] S.Nitta,T.Kashima,M.Kariya,Y.Yukawa,S.Yamaguchi,H.Amano and I.Akasaki: "Mass Transport,Faceting and Behavior of Dislocations in GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W2.8 (2000)

[文献書誌] M.Benamara,L.Weber,J.H.Mazur,W.Swider,J.Washburn,M.Iwaya,I.Akasaki and H.Amano: "The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN"MRS Internet J.Nitride Semicond.Res.. 5S1. W5.8 (2000)

[文献書誌] I.Akasaki,S.Kamiyama,T.Detchprohm,T.Takeuchi and H.Amano: "Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes"MRS Internet J.Nitride Semicond.Res.. 5S1. W6.8 (2000)

[文献書誌] C.Wetzel,T.Takeuchi,H.Amano and I.Akasaki: "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures"MRS Internet J.Nitride Semicond.Res.. 5S1. W12.4 (2000)

[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"Surface Science Society of Japan. 21. 38-44 (2000)

[文献書誌] P.N.Hai,W.M.I.Chen,A Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN:An optically detected magnetic-resonance study"Physical Review-Series B-. 62. R10607-10609 (2000)

[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells"Journal of Applied Physics. 88. 2677-2681 (2000)

[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,T.Takeuchi,H.Amano,I.Akasaki: "Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells"Physica Status Solidi A Applied Research. 180. 85-90 (2000)

[文献書誌] M.Iwaya,S.Terao,N.Hayashi,T.Kashima,H.Amano,I.Akasaki: "Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer"Applied Surface Science. 159/160. 405-413 (2000)

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,H.Amano,I.Akasaki: "Strain relief by In-doping and its effect on the surface and on the interface structures in (Al) GaN on sapphire grown by metalorganic vapor-phase epitaxy"Applied Surface Science. 159/160. 414-420 (2000)

[文献書誌] S.Nitta,M.Kariya,T.kashima,S.Yamaguchi,H.Amano,I.Akasaki: "Mass transport and the reduction of threading dislocation in GaN"Applied Surface Science. 159/160. 421-426 (2000)

[文献書誌] M.Tabuchi,K.Hirayama,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method"Applied Surface Science. 159/160. 432-440 (2000)

[文献書誌] T.Sato,M.Iwaya,K.Isomura,T.Ukai,S.Kamiyama,H.Amano,I.Akasaki: "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes"IEICE TRANSACTIONS ON ELECTRONICS E SERIES C. 83. 573-578 (2000)

[文献書誌] J..P.Bergman,B.Monemar,G.Pozina,B.E.Sernelius,P.O.B.E.Holtz,H.Amano,I.Akasaki: "Radiative Recombination in InGaN/GaN Multiple Quantum Wells"Materials Science Forum. 338/342. 1571-1574 (2000)

[文献書誌] G.Pozina,J.P.Bergman,B.Monemar,S Yamaguchi,H.Amano,I.Akasaki: "Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant"Applied Physics Letters. 76. 3388-3390 (2000)

[文献書誌] N.Hayashi,S.Kamiyama,T.Takeuchi,M.Iwaya,H.Amano,I.Akasaki,S.Watanabe,Y.Kaneko and N.Yamada: "Electrical conductivity of low temperature deposited A10.1Ga0.9N interlayer"Jpn.J.Appl.Phys. 39. 6493-6495 (2000)

[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano and I.Akasaki,: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

[文献書誌] G.Pozina,J.P.Bergman,and B.Monemar,M.Iwaya,S.Nitta,H.Amano,and I.Akasaki: "InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport"Appl.Phys.Lett.. 77. 1638-1640 (2000)

[文献書誌] C.Wetzel,T.Takeuchi,H.Amano,I.Akasaki: "Quantized states in Ga〜1〜xIn〜xN/GaN heterostructures and the model of polarized homogeneous quantum wells"PHYSICAL REVIEW -SERIES B-. 62. R13 302-R13-305 (2000)

[文献書誌] M.Tabuchi,Y.Takeda,T.Takeuchi,H.Amano,I.Akasaki: "Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 38-44 (2000)

[文献書誌] H.Amano,I.Akasaki: "Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire"JOURNAL-SURFACE SCIENCE SOCIETY OF JAPAN. 21. 2-9 (2000)

[文献書誌] P.N.Hai,W.M.Chen,I.A.Buyanova,B.Monemar,H.Amano,I.Akasaki: "Ga-related defect in as-grown Zn-doped GaN:An optically detecte magnetic-resonance study"PHYSICAL REVIEW -SERIES B-. 62. R10607-R10609 (2000)

[文献書誌] S.Nitta,T.Kashima,R.Nakamura,M.Iwaya,H.Amano,I.Akasaki: "Mass Transport of GaN and Reduction of Threading Dislocations"SURFACE REVIEW AND LETTERS. 7. 561-564 (2000)

[文献書誌] S.Yamaguchi,M.Kariya,S.Nitta,T.Kashima,M.Kosaki,Y.Yukawa,H.Amano,I.Akasaki: "Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas"JOURNAL OF CRYSTAL GROWTH. 221. 327-331 (2000)

[文献書誌] M.Wagner,I.A.Buyanova,N.Q.Thinh,W.M.Chen,B.Monemar,J.L.Lindstrom,H.Amano,I.Akasaki: "Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN"PHYSICAL REVIEW -SERIES B-. 62. 16572-16577 (2000)

[文献書誌] N.A.Shapiro,Y.Kim,H.Feick,E.R.Weber,P.Perlin,J.W.Yang,I.Akasaki,H.Amano: "Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain"PHYSICAL REVIEW -SERIES B-. 62. R16318-R16321 (2000)

[文献書誌] C.Wetzel,M.Kasumi,H.Amano,I.Akasaki: "Absorption Spectroscopy and Band Structure in Polarized GaN/Al〜xGa〜1〜-〜xN Quantum Wells"PHYSICA STATUS SOLIDI A APPLIED RESEARCH. 183. 51-60 (2001)

2000 年度実績報告書

赤崎勇名城大学, 理工学部, 教授 (20144115)