2001 年度実績報告書

量子限界近傍で動作するIII-V族量子細線トランジスタ論理・記憶集積回路の開発

研究課題

研究課題/領域番号	12555083
研究機関	北海道大学
研究代表者	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
研究分担者	葛西誠也北海道大学, 大学院・工学研究科, 助教授 (30312383) 橋詰保北海道大学, 量子集積エレクトロニクス研究センター, 助教授 (80149898)
キーワード	量子細線トランジスタ / III-V族化合物半導体 / 量子限界 / 論理回路 / 記憶回路 / 集積回路 / ショットキーゲート / MBE選択成長
研究概要	本研究の目的は、独自の構造をもつIII-V化合物半導体量子細線トランジスタによって、量子限界近傍で動作をする論理回路やメモリー回路のプロトタイプを実現し、量子集積回路に実用化の展望を切り開くことにある。平成13年度に得られた成果を以下に示す。 1.量子限界近傍の電力・遅延時間積で動作可能な新たな量子論理回路として、二分決定グラフ(BDD)アーキテクチャを量子細線トランジスタで実装するBDD量子論理回路方式を提案した。そして、基本デバイスをGaAsエッチングナノ細線とナノショットキーゲート技術を用いて試作し、低温および室温にて動作実証するとともに、これを集積化することにより基本論理回路を試作し回路が正しい論理演算を行うことを確認した。 2.量子細線トランジスタの基本構造として、均一性およびサイズ制御性に優れたInGaAsおよびGaAs埋め込みリッジ量子細線アレイを選択MBE成長法により実現した。ことにInGaAs量子細線においては基板前処理の最適化や原子状水素処理の適用により、サブミクロンピッチ高密度細線アレイの実現に成功した。 3.素子表面不活性化のために、III-V族半導体表面を走査トンネル分光(STS)法により詳細に評価した。異常STSスペクトルの機構を明らかにし、ピンニングがエネルギー的・空間的に連続分布する表面準位の集合体によることを示した。さらに、シリコン界面制御層(Si ICL)を用いた表面不活性化法を検討し、Si ICL形成前初期表面の最適化を図るとともに、本手法の有効性をSTSなどで確認した。

研究成果
(47件)

すべてその他

すべて文献書誌 (47件)

[文献書誌] T. Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)
[文献書誌] H. Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)
[文献書誌] T. Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)
[文献書誌] F. Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)
[文献書誌] Z. Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)
[文献書誌] C. Jiang: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)
[文献書誌] S. Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)
[文献書誌] M. Miczek: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)
[文献書誌] T. Yoshida: "Realization of UHV-Compativle Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)
[文献書誌] T. Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)
[文献書誌] S. Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)
[文献書誌] Y.-G. Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C 10. 1335-1343 (2001)
[文献書誌] H. Takahashi: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C 10. 1344-1349 (2001)
[文献書誌] T. Hashizume: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiN_x film"IEICE-C. E84-C 10. 1455-1461 (2001)
[文献書誌] 謝永桂: "InP 系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会論文誌C. J84-C. 872-882 (2001)
[文献書誌] T. Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)
[文献書誌] Y. G. Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC-and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)
[文献書誌] S. Anantathanasarn: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)
[文献書誌] T. Hashizume: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)
[文献書誌] H. Hasegawa: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering. B80. 147-151 (2001)
[文献書誌] T. Hashizume: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering. B80. 309-312 (2001)
[文献書誌] H. Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)
[文献書誌] S. Ootomo: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al2O3 layer"Physica Status Solidi A-Applied Research. 188. 371-374 (2001)
[文献書誌] H. Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of the Korean Physical Society. 39. S402-S409 (2001)
[文献書誌] M. Konishi: "In-situ XPS and Photoluminescence Characterization of GaN Surfaces Grown by MBE on MOVPE GaN Templates"Institute of Physics Conference Series. in press. (2002)
[文献書誌] T. Sato: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Institute of Physics Conference Series. in press. (2002)
[文献書誌] F. Ishikawa: "Self-consistent Computer Analysis of Cathodoluminescence In-Depth Spectra for Compound Semiconductor Heterostructures"Institute of Physics Conference Series. in press. (2002)
[文献書誌] S. Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. in press. (2002)
[文献書誌] T. Muranaka: "Control of Morphology and Wire Width in InGaAs Ridge Quantum Wires Grown by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy"Physica E. in press. (2002)
[文献書誌] M. Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. in press. (2002)
[文献書誌] C. Jiang: "MBE Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires"Microelectronics Engineering. in press. (2002)
[文献書誌] T. Hirano: "Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] Z. Fu: "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] C. Jiang: "Realization of Submicron-Pitch Linear Arrays of Nanometer-Sized InGaAs Ridge Quantum Wires by Selective MBE Growth on Patterned InP Substrates"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] M. Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] C. Jiang: "Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] M. Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] Y. Nakano: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction"Japanese Journal of Applied Physics. in press. (2002)
[文献書誌] S. Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. in press. (2002)
[文献書誌] A. Ito: "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen Assisted Selective Molecular Beam Epitaxy"Applied Surface Science. in press. (2002)
[文献書誌] M. Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. in press. (2002)
[文献書誌] N. Negoro: "Scanned-Probe Topological and Spectroscopic Study of Surface States on Clean and Si-Deposited GaAs (001)-c(4x4) surfaces"Applied Surface Science. in press. (2002)
[文献書誌] F. Ishikawa: "Depth Resolved Cathodluminescence Characterization of Buried InGaP/GaAs Heterointerfaces"Applied Surface Science. in press. (2002)
[文献書誌] S. Anantathanasarn: "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer"Applied Surface Science. in press. (2002)
[文献書誌] Z. Fu: "Gated Photoluminescence Study of Oxide-Free InP MIS Structure Having an Ultrathin Silicon Interface Control Layer"Applied Surface Science. in press. (2002)
[文献書誌] Z. Jin: "Effects of Nitrogen Addition on Methane-Based ECR Plasma Etching of GaN and Related Materials"Applied Surface Science. in press. (2002)
[文献書誌] S. Oyama: "Mechanism of Current Leakage through Metal/n-GaN Interfaces"Applied Surface Science. in press. (2002)

2001 年度 実績報告書

量子限界近傍で動作するIII-V族量子細線トランジスタ論理・記憶集積回路の開発

研究代表者

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

研究成果

[文献書誌] T. Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)

[文献書誌] H. Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)

[文献書誌] T. Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)

[文献書誌] F. Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)

[文献書誌] Z. Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)

[文献書誌] C. Jiang: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)

[文献書誌] S. Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)

[文献書誌] M. Miczek: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)

[文献書誌] T. Yoshida: "Realization of UHV-Compativle Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)

[文献書誌] T. Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)

[文献書誌] S. Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)

[文献書誌] Y.-G. Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C 10. 1335-1343 (2001)

[文献書誌] H. Takahashi: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C 10. 1344-1349 (2001)

[文献書誌] T. Hashizume: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiN_x film"IEICE-C. E84-C 10. 1455-1461 (2001)

[文献書誌] 謝永桂: "InP 系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会論文誌C. J84-C. 872-882 (2001)

[文献書誌] T. Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)

[文献書誌] Y. G. Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC-and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)

[文献書誌] S. Anantathanasarn: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)

[文献書誌] T. Hashizume: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)

[文献書誌] H. Hasegawa: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering. B80. 147-151 (2001)

[文献書誌] T. Hashizume: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering. B80. 309-312 (2001)

[文献書誌] H. Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)

[文献書誌] S. Ootomo: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al2O3 layer"Physica Status Solidi A-Applied Research. 188. 371-374 (2001)

[文献書誌] H. Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of the Korean Physical Society. 39. S402-S409 (2001)

[文献書誌] M. Konishi: "In-situ XPS and Photoluminescence Characterization of GaN Surfaces Grown by MBE on MOVPE GaN Templates"Institute of Physics Conference Series. in press. (2002)

[文献書誌] T. Sato: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Institute of Physics Conference Series. in press. (2002)

[文献書誌] F. Ishikawa: "Self-consistent Computer Analysis of Cathodoluminescence In-Depth Spectra for Compound Semiconductor Heterostructures"Institute of Physics Conference Series. in press. (2002)

[文献書誌] S. Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. in press. (2002)

[文献書誌] T. Muranaka: "Control of Morphology and Wire Width in InGaAs Ridge Quantum Wires Grown by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy"Physica E. in press. (2002)

[文献書誌] M. Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. in press. (2002)

[文献書誌] C. Jiang: "MBE Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires"Microelectronics Engineering. in press. (2002)

[文献書誌] T. Hirano: "Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] Z. Fu: "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] C. Jiang: "Realization of Submicron-Pitch Linear Arrays of Nanometer-Sized InGaAs Ridge Quantum Wires by Selective MBE Growth on Patterned InP Substrates"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] M. Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] C. Jiang: "Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] M. Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] Y. Nakano: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction"Japanese Journal of Applied Physics. in press. (2002)

[文献書誌] S. Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. in press. (2002)

[文献書誌] A. Ito: "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen Assisted Selective Molecular Beam Epitaxy"Applied Surface Science. in press. (2002)

[文献書誌] M. Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. in press. (2002)

[文献書誌] N. Negoro: "Scanned-Probe Topological and Spectroscopic Study of Surface States on Clean and Si-Deposited GaAs (001)-c(4x4) surfaces"Applied Surface Science. in press. (2002)

[文献書誌] F. Ishikawa: "Depth Resolved Cathodluminescence Characterization of Buried InGaP/GaAs Heterointerfaces"Applied Surface Science. in press. (2002)

[文献書誌] S. Anantathanasarn: "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer"Applied Surface Science. in press. (2002)

[文献書誌] Z. Fu: "Gated Photoluminescence Study of Oxide-Free InP MIS Structure Having an Ultrathin Silicon Interface Control Layer"Applied Surface Science. in press. (2002)

[文献書誌] Z. Jin: "Effects of Nitrogen Addition on Methane-Based ECR Plasma Etching of GaN and Related Materials"Applied Surface Science. in press. (2002)

[文献書誌] S. Oyama: "Mechanism of Current Leakage through Metal/n-GaN Interfaces"Applied Surface Science. in press. (2002)

2001 年度実績報告書

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)