-
[文献書誌] H.Nakazawa: "Gas-Source MBE of SiC/Si using monomethylsilane"Thin Solid Films. 369. 269-272 (2000)
-
[文献書誌] H.Nakazawa: "Formation of High Quality SiC on Si(100) at 900C using Monomethylsilane Gas-Source MBE"Materials Science Forum. 338-342. 269-272 (2000)
-
[文献書誌] H.Nakazawa: "Dissociative adsorption of monomethylsilane (MMS) on Si (100) as revealed by comparative temperature-programmed-desorption studies on H/, C_2H_2/, and MMS/Si (100)"Appl.Surf.Sci.. 162-163. 139-145 (2000)
-
[文献書誌] M.Suemitsu: "Transition from random to island growth mode during Si (100) -2x1 dry oxidation and its description with autocatalytic reaction model"Appl.Surf.Sci.. 162-163. 293-298 (2000)
-
[文献書誌] H.Nakazawa: "Role of hydrogen prepairing in the hydrogen desorption kinetics from Si (100) -2x1 : effects of hydrogenating-gas and thermal history"Surf.Sci.. 465. 177-185 (2000)
-
[文献書誌] M.Suemitsu: "Mode transition between growth and decomposition of oxides on Si (001) : Kinetically determined critical coverage for oxidation"Appl.Phys.Lett.. 77. 3179-3181 (2000)
-
[文献書誌] Y.Tsukidate: "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy"Appl.Surf.Sci.. 6791. 1-6 (2001)