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[文献書誌] Y.Tsukidate: "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy"Appl.Surf.Sci.. 175-176. 43-48 (2001)
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[文献書誌] T.Murata: "Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy : In situ observations and detailed modeling of the growth"Appl.Phys.Lett.. 79. 746-748 (2001)
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[文献書誌] H.Nakazawa: "Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy"Appl.Phys.Lett. 79. 755-757 (2001)
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[文献書誌] Y.Tsukidate: "Infrared study of SiH_4-adsorbed Si(100) surfaces : observation and mode assignment of new peaks"Jpn.J.Appl.Phys.. 40. 5206-5210 (2001)
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[文献書誌] H.Nakazawa: "Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer"Series of Material Science Forum,April,2002 Trans Tech Publications Ltd.(Switzerland). (To be published). (2001)