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[文献書誌] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst.Phys.Conf.Ser.. 166. 219-222 (2000)
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[文献書誌] M.Iyawa: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Jpn.J.Appl.Phys.. 39. 4651-4652 (2000)
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[文献書誌] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Jpn.J.Appl.Phys.. 39. 4609-4615 (2000)
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[文献書誌] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. (in press). (2001)
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[文献書誌] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. (in press). (2001)
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[文献書誌] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40(in press). (2001)
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[文献書誌] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40(in press). (2001)