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[文献書誌] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)
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[文献書誌] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)
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[文献書誌] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)
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[文献書誌] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown(001)Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)
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[文献書誌] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C10. 1335-1343 (2001)
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[文献書誌] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)
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[文献書誌] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC-and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)
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[文献書誌] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)
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[文献書誌] S.Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. (in press). (2002)
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[文献書誌] M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)
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[文献書誌] M.Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. (in press). (2002)
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[文献書誌] M.Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. (in press). (2002)
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[文献書誌] S.Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. (in press). (2002)
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[文献書誌] M.Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. (in press). (2002)
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[文献書誌] A.Kameda: "Effects of Surface States on Control Characteristics of Nanometer Scale Schottky Gates Formed on GaAs"Solid-State Electronics. (in press). (2002)
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[文献書誌] S.Kasai: "Fabrication of GaAs-based Integrated HaIf and FuIl Adders by Novel Hexagonal BDD Quantum Circuit Approach"Solid-State Electronics. (in press). (2002)