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[文献書誌] Y.Saito, H.Takahashi, K.Ohtsubo, M.Hirayama, S.Sugawa, H.Aharoni, T.Ohmi: "Improved MOSFET Subthreshold Leakage Current by its Irradiation with Hydrogen Radicals Generated in Microwave-Exited High-Density Inert Gas Plasma"2001 IEEE International Reliability Physics Symposium Proceedings. 2001. 319-326 (2001)
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[文献書誌] H.Shimada, I.Ohshima, S.Nakao, M.Nakagawa, K.Kanemoto, M.Hirayama, S.Sugawa, T.Ohmi: "Low Resistivity bcc-Ta/TaNx Metal Gate MNSFET having Plane Gate Structure Featuring Fully Low-Temperature Processing below 450℃"2001 SYMPOSIUM ON VLSI TECHNOLOGY DIGEST OF TECHNICAL PAPERS. 2001. 67-68 (2001)
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[文献書誌] H.Shimada, I.Ohshima, T.Ushiki, S.Sugawa, T.Ohmi: "Tantalum Nitride Metal Gate FD-SOI CMOS FETs Using Low Resistivity Self-Grown bcc-Tantalum Layer"IEEE TRANSACTION ON ELECTRON DEVICES. 48・8. 1619-1626 (2001)
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[文献書誌] K.Ohtsubo, Y.Saito, M.Hirayama, S.Sugawa, H.Aharoni, T.Ohmi: "Improved J-E Characteristics and Stress Induced Leakage Current (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Exited High-Density Kr/O_2/NH_3 Plasma"Extend Abstracts of the 2001 International Conference on Solid State Device and Materials. 2001. 162-163 (2001)
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[文献書誌] N.Ueda, Y.Saito, M.Hirayama, Y.Yamauchi, S.Sugawa, T.Ohmi: "Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation"Extend Abstracts of the 2001 International Conference on Solid State Device and Materials. 2001. 164-165 (2001)
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[文献書誌] S.Sugawa, I.Ohshima, H.Ishino, Y.Saito, M.Hirayama, T.Ohmi: "Advantage of Silicon Nitride Gate Insulator Transistor by using Microwave-Excited High-Density Plasma for applying 100nm Technology Node"2001 International Electron Device Meeting, TECHNICAL DIGEST. 2001. 817-820 (2001)