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[文献書誌] H.Iwai, S.Ohmi: "Gate dielectrics for deep Sub-0.1μm CMOS"FTM 2001 Poster Presentations, Scientific Program, 2001 Advanced Research Workshop, Future Treads in Microelectronics. 45 (2001)
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[文献書誌] H.Iwai: "Direction of Silicon Technology from Past to Future"Keynote address, 8^<th> International Symposium on the Physical & Failure Analysis of Integrated circuits, IPFA 2001, Proceedings. 1-35 (2001)
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[文献書誌] H.S.Momose, T.Ohguro, E.Morifuji, H.Sugaya, S.Nakamura, H.Iwai: "Ultrathin Gate Oxide CMOS with Noudoped Selective Epitaxial Si Channel Layer"IEEE Transactions on Electron Devices. Vol.48 No.6. 1136-1144 (2001)
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[文献書誌] H.S.Momose, E.Morifuji, T.Yoshitomi, T.Ohguro, M.Saito, H.Iwai: "Cutoff Frequency and propagation Delay Time of 1.5-nm Gate Oxide CMOS"IEEE Transactions on Electron Devices. Vol.48 No.6. 1165-1174 (2001)
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[文献書誌] H.S.Momose, T.Ohgro, S.Nakamura, Y.Toyoshima, H.Ishiuchi, H.Iwai: "Study of water orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide"2001 Symposium on VLSI Technology, Kyoto, Digest of Technical Papers. 78-78 (2001)
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[文献書誌] H.Iwai, S.Ohmi: "Problems and expected solutions for the gate oxide thinning in miniaturized CMOS VLSI devices"International Workshop on Device Technology, Alternatives to SiO_2 as Gate Dielectric for Future. 16 (2001)
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[文献書誌] H.Iwai, S.Ohmi: "Trends and Projections for the Future of Scaling and Future Integration Trends"The Computer Engineering Handbook. 29 (2002)