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[文献書誌] W.Shimada, H.Tochihara: "In situ observation of initial homoepitaxial growth on the Si(111)7x7 surface using scanning tunneling microscopy"J. Cryst. Growth. 237-239. 35-38 (2002)
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[文献書誌] S.S.Lee, H.J.Song, J.W.Chung, K.Kong, D.Y.Ahn, H.Li, B.D.Yu, H.Tochihara: "structural and electronic identification of thallium overlayer on the Si(111)7x7 surface"Phys. Rev.. B66. 233312-1-233312-4 (2002)
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[文献書誌] W.Shimada, H.Tochihara: "Formation mechanism of the Si(111)7x7 reconstruction studied by scanning tunneling microscopy : Zipper-like restructuring of isolated single faulted-halves"Surf. Sci.. 526,No.3. 219-229 (2003)
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[文献書誌] T.Noda, S.Mizuno, C.W.Chung, H.Tochihara: "T4 site adsorption of T1 atoms in a Si(111)-(1x1)-Tl structure, determined by low-energy electro diffraction analysis"Jpn. J. Appl. Phys. Part2. 42No3B(in press). (2003)
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[文献書誌] T.Takahashi, H.Tajiri, K.Sumitani, K.Akimoto, H.Sugiyama, X.Zhang, H.Kawata: "X-ray diffraction study of the phase transition of Si(111)root3 X root3-Ag surface"Surf. Rev. Lett.. (in press).
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[文献書誌] E.Miyoshi, H.Mori, S.Tanaka, Y.Sakai: "Theoretical study of interactions between the Si(111) surface and metal atoms"Surf. Sci.. 514No.1-3. 383-388 (2002)