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[文献書誌] Y.Tomioka et al.: "Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry"Materials Science Forum. 389-393. 1029-1032 (2002)
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[文献書誌] Y.Hijikata et al.: "X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces"Materials Science Forum. 389-393. 1033-1036 (2002)
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[文献書誌] H.Yaguchi et al.: "Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy"Materials Science Forum. 389-393. 621-624 (2002)
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[文献書誌] Y.Ishida et al.: "The Investigation of 4H-SiC/SiO_2 Interfaces by Optical and Electrical Measurements"Materials Science Forum. 389-393. 1013-1016 (2002)
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[文献書誌] Y.Hijikata et al.: "Photoemission Spectroscopy and In-Situ Spectroscopic Ellipsometry Studies on the Ar Post-Oxidation Annealing Effects of Oxide/SiC Interfaces"Proc. 1st Asia-Pacific Workshop on Widegap Semiconductors. 127-132 (2002)
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[文献書誌] 吉川正人 その他: "炭化ケイ素基板上に成長させた1200℃ドライ酸化膜中の界面欠陥の電気特性と熱アニーリング効果"電子情報通信学会誌. (印刷中).
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[文献書誌] 吉田貞史その他: "SiC素子の基礎と応用"オーム杜. 280 (2003)