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[文献書誌] Q.D.M.Khosru: "High-quality NH_3-annealed atomic layer deposited Si-nitride/SiO_2 stack gate dielectrics for sub-100nm technology generations"Solid-State Electronics. 46. 1659-1664 (2002)
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[文献書誌] A.Nakajima: "Atomic-layer-deposition of ZrO_2 with a Si nitiride barrier layer"Applied Physics Letters. 81. 2824-2826 (2002)
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[文献書誌] A.Nakajima: "Atomic-layer-deposited silicon-nitride/SiO_2 stack ----a highly potential gate dielectrics for advanced CMOS technology"Microelectronics Reliability. 42. 1823-1835 (2002)
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[文献書誌] A.Nakajima: "Atomic-layer-deposition of Si nitride and ZrO_2 for gate dielectrics"Atomic Layer Deposition (ALD 2002) Conference. 6-6 (2002)
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[文献書誌] H.Ishii: "Atomic-layer deposition of ZrO_2 with a Si nitiride barrier layer"2002 Int. Conf. on Solid State Devices and Materials. 452-453 (2002)
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[文献書誌] Q.D.M.Khosru: "A comparative study of bulk and interface trap generation in ultrathin SiO_2 and atomic-layer-deposited Si-nitride/SiO_2 stack gate dielecticts"Fourth Int. Symposium on Control of Semiconductor Interfaces (ISCSI-IV). A6-3 (2002)
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[文献書誌] 石井紘之: "原子層堆積Si窒化膜バリア層上のZrO_2薄膜の形成"平成14年秋季第63回応用物理学会学術講演会. 2号. 740 (2002)
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[文献書誌] 葛西哲郎: "ALDシリコン窒化膜/SiO_2スタック構造ゲート絶縁膜を用いたMOSFETの作製ト電気特性の評価"平成15年春季第50回応用物理学関係連合講演会. (2003)