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[文献書誌] M.Asada: "Quantum theory of a semiconductor klystron"Physical Review B. 67・11. 115303 1-115303 8 (2003)
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[文献書誌] M.Tsutsui, T.Nagai, M.Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans. Electron. IEICE of Japan. E85-C・5. 1191-1199 (2002)
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[文献書誌] M.Tsutsui, M.Asada: "Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Japan. J. Applied Physics. 41・1. 54-58 (2002)
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[文献書誌] Y.Niiyama, T.Maruyama, N.Nakamura, M.Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn. J. Appl. Phys.. 41・7A. L751-L753 (2002)
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[文献書誌] T.Maruyama, N.Nakamura, M.Watanabe: "Crystal Growth of BeZnSe on CaF_2/Si(111) Subtrate"Jpn. J. Appl. Phys.. 41・8A. L876-L877 (2002)
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[文献書誌] M.Watanabe, T.Ishikawa, M.Matsuda, T.Kanazawa, M.Asada: "Room temperature negative differential resistance of CdF_2/CaF_2 resonant tunneling diode grown on Si using nanoarea local epitaxy"Abstract of International Conference on Physics of Semiconductors (Edinburgh/UK). Part III. 157 (2002)