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[文献書誌] T.Takano, M.Kurimoto, J.Yamamoto, H.Kawanishi: "Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emission"J.Crystal Growth. Vol.237239. 972-977 (2002)
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[文献書誌] T.Honda, K.Sato, T.Hashimoto, M.Shinohara, H.Kawanishi: "GaN growth by compound source molecular beam epitaxy"J.Crystal Growth. Vol.237239. 237-239 (2002)
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[文献書誌] M.Horie, Y.Ishihara, J.Yamamoto, M Kurimoto, H.Kawanishi: "Optical Characteristic of the Straine-Controlled GaN Epitaxial Layer Grown on 6H-SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer"phys.Stat.sol..(a). Vol.192 No.1. 151-156 (2002)
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[文献書誌] T.Honda, Y.Inao, K.Konno, K, Mineo, S.Kumabe, H.Kawanishi: "Deposition of Amorphous GaN by Compound Source Molecular Beam Epitaxy for Eelectroluminescent Devices"Phys.Stat.sol..(a). Vol.192 No.1. 461-465 (2002)