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[文献書誌] M.Fujita, N.Kawamoto, T.Tatsumi, K.Yamagishi, Y.Horikoshi: "Molecular Beam Epitaxial Growth of ZnO on Si Substrate by Using Ozone as an Oxygen Source"Jpn.J.Appl.Phys. 42. 67-70 (2003)
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[文献書誌] Y.Horikoshi et al.: "Growth of Be-doped p-type GaN under Invariant Polarity Conditions"Jpn.J.Appl.Phys.. 42. 7194-7197 (2003)
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[文献書誌] N.Kawamoto, M.Fujita, T.Tatsumi, Y.Horikoshi: "Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy"Jpn.J.Appl.Phys.. 42. 7209-7212 (2003)
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[文献書誌] R.Suzuki, H.Amano, T.Kuroki, J.Nishinaga, Y.Horikoshi: "Compositional nonuniformity in molecular beam epitaxy grown InAsSb on GaAs(111)A substrates"Jpn.J.Appl.Phys. 42. 6260-6264 (2003)
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[文献書誌] Y.Horikoshi et al.: "Comparative study of p-type dopants, Mg and Be in GaN grown by Rf-MBE"Inst Phys.Conf.Ser.. 174. 29-33 (2003)
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[文献書誌] D.Okada, H.Hasegawa, Y.Horikoshi, T.Saito: "Area selective epitaxy of anti-dot structure by solid source MBE depositon sequence"Inst.Phys.Conf.Ser. 174. 33-37 (2003)
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[文献書誌] Y.Horikoshi et al.: "Growth of Be-doped p-type GaN under Invariant Potarity Conditions"Journal of the Surface Science Society of Japan. Vol.24, No.9. 539-542 (2003)