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[文献書誌] G.Sasikala., M.Kurimoto, P Thilakan, K.Uesugi, I.Suemune, H.Machida, N.Shimoyama: "Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation"J.Appl.Phys.. Vol.94, No.8. 4781-4875 (2003)
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[文献書誌] K.Uesugi, I.Suemune, H.Machida, N.Shimoyama: "Metalorganic molecular-beam epitaxy and characterization of GaAsNSe/GaAs superlattices emitting around 1.5 μm-wavelength region"Appl.Phys.Lett.. Vol.82, No.6. 898-900 (2003)
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[文献書誌] H.Kumano, Y.Hitaka, I.Suemune: "Emissions from Single Localized States Observed from ZnCdS Ternary Alloy Mesa Structures"Appl.Phys.Lett.. Vol.82, No.24. 4277-4279 (2003)
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[文献書誌] W.Zhou, K.Uesugi, I.Suemune: "1.6-μm Emission from GaInNAs with Indium-induced Increase of N Composition"Appl.Phys.Lett.. Vol.83, No.10. 1992-1994 (2003)
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[文献書誌] S.Ganapathy, X.Q.Zhang, I.Suemune, K.Uesugi, B.-J.Kim, T.-Y.Seong: "GaNAs as strain compensating layers for 1.55 μm light emission from InAs Quantum Dots"Jpn.J.Appl.Phys.. Vol.42, No.9A. 5598-5601 (2003)
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[文献書誌] X.Q.Zhang, S.Ganapathy, I.Suemune, H.Kumano, K.Uesugi, Y.Nabetani, T.Matsumoto: "Improvement of InAs Quantum-dots Optical Properties by Strain Compensation with GaNAs Capping Layers"Appl.Phys.Lett.. Vol.83, No.22. 4524-4526 (2003)