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[文献書誌] Y.Suda: "Si1-xGex/Si Triple Barrier RTD with a High Peak-to-Valley Ratio of ≧ 180 at RT,"Elctrochemical Society Proceedings Volume. PV 2002-9. 47-60 (2002)
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[文献書誌] Y.Suda, A.Meguro, H.Maekawa: "High PVCR Si1-xGex/Si Electron-Tunneling RTD Using Multiple-Well and Annealed Thin Double-Layer Buffer"Electrochemical Society Proceedings Volume. (in press). (2002)
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[文献書誌] Y.Suda, N.Hosoya, D.Shiratori: "New Si Atomic-Layer-Controlled Growth Technique with Thermally-Cracked Hydride Molecule"Journal of Crystal Growth. Vol.237-239. 1404-1409 (2002)
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[文献書誌] Y.Suda, N.Hosoya, K.Miki: "Si Submonolayer and Monolayer Digital Growth Operation Technique Using Si_2H_6 as Atomically Controlled Growth Nanotechnology"Applied Surface Science. (in press). (2003)
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[文献書誌] K.Yamamura, Y.Suda: "Novel Single Electron Logic Circuits Using Charge-Induced Signal Transmission (CIST) Structufres"IEEE Transaction on Nanotechnolog. Vol.2,no.2. 1-10 (2003)
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[文献書誌] N.Hosoya, K.Miki, Y.Suda: "Ordered 1x1 SiH_2 Monolayer Adsorption on Si(001) from Cracked Si_2H_6 and Its Application to ALE Growth Operation"Extended Abstracts of International Conference on Solid State Devices and Materials. 488-489 (2002)