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[文献書誌] M.Otani, K.Shiraishi, A.Oshiyama: "Theoretical study on stable structures and diffusion mechanisms of B in SiO_2"Applied Surface Science. 216. 490-496 (2003)
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[文献書誌] S.Fukatsu, S.Fukatsu, T.Takahashi, K.M.Itoh, M.Uematsu, A.Fujiwara, H.Kageshima, Y.Takahashi, K.Siraishi, U.Gosele: "Effect of the Si/SiO_2 interface on self-diffusion of Si in semiconductor-grade SiO_2"Applied Physics Letters. 83. 3897-3899 (2003)
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[文献書誌] M.Otani, K.Shiraishi, A.Oshiyama: "First-principles calculations of boron-related defects in SiO_2"Physical Review B. 68. Art. No.184112 (2003)
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[文献書誌] S.Fukatsu, T.Takahashi, K.M.Itoh, M.Uematsu, A.Fujiwara, H.Kageshima, Y.Takahashi, K.Shiraishi: "The effect of partial pressure of oxygen on self-diffusion of Si in SiO_2"Japanese Journal of Applied Physics Part 2. 42. L1492-L1494 (2003)
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[文献書誌] M.Otani, K.Shiraishi, A.Oshiyama: "Charge-state-dependent boron diffusion in SiO_2"Physica B. 340. 949-952 (2003)
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[文献書誌] M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi, U.Gosele: "Modeling of Si self-diffusion in SiO_2 : Effect of the Si/SiO_2 interface including time-dependent diffusivity"Applied Physics Letters. 84. 876-878 (2004)