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[文献書誌] Kanji Yasui, Y.Narita, T.Inubushi, T.Akahane: "In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane"Journal of Crystal Growth. 237-239. 1254-1259 (2002)
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[文献書誌] Y.Narita, T.Inubushi, Kanji Yasui, T.Akahane: "Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(001)"Applied Surface Science. (印刷中). (2003)
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[文献書誌] Y.Narita, T.Inubushi, Kanji Yasui, T.Akahane: "Initial stage of 3C-SiC growth on Si (001)-2x1 surface using monomethylsilane"Applied Surface Science. (印刷中). (2003)
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[文献書誌] 成田 克, 犬伏宗和, 安井寛治, 赤羽正志: "モノメチルシランを用いた3c-sic成長初期過程"電子情報通信学会技術研究報告. Vol.102No.261. 31-36 (2002)
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[文献書誌] 原島正幸, 成田 克, 安井寛治, 赤羽正志: "MMSi, DMSiにより形成されるSic(4x4)構造の評価"電子情報通信学会技術研究報告. Vol.102No.434. 77-82 (2002)
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[文献書誌] H.Harashima, Y.Narita, Kanji Yasui, T.Akahane: "The role of carbon atoms during the formation of Si c(4x4) structure by organosilicon compounds"Proc. of the 20^<th> Symposium on Plasma Processing. 299-300 (2003)