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[文献書誌] M.Sumiya, S.Fuke: "Review of polarity determination and control of GaN"MRS Internet J.of Nitride Semicond.Res. 9. 1-35 (2004)
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[文献書誌] T.Ohsawa, Y.Yamamoto, M.Sumiya, Y.Matsumoto, H.Koinuma: "Combinatorial STM study of Cr deposited on Anatase TiO_2 (001) surface"Langumur. (accepted). (2004)
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[文献書誌] M.Takabe, M.Sumiya, S.Fuke: "HNO_3 treatment of sapphire for management of GaN polarity in MOCVD method : Comparison of the properties of +c and -c GaN region'Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates"MRS proceeding. (accepted). Y3.3 (2004)
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[文献書誌] M.Sumiya, A.Tsukazaki, S.Fuke, A.Ohtomo, H.Koinuma, M.Kawasaki: "SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition"Applied Surface Science. 223. 206-209 (2004)
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[文献書誌] J-H.Song, Y.-Z.Yoo, T.Skiguchi, T.Nakajima, P.Ahmet, T.Chikyow, K.Okuno, M.Sumiya, H.Koinuma: "Growth of non-polar a-plane III-nitride thin films on Si (100) using non-polar plane butter layer"Phys.Stat.Sol.(c). 0/No. 7. 2520-2524 (2003)
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[文献書誌] 角谷正友(執筆分担): "イオン工学ハンドブック第4章 薄膜形成技術 4.3 CVD技術"(株)イオン工学研究所. 12 (2003)