| 研究実績の概要 |
Charge injection from the metal into the semiconductor is a crucial step in every device using organic semiconductors. Understanding this process is necessary to further improve device performance. In the last year, we analyzed a about 20 transistors with a very distinct charge injection problem. By combining these results with a self developed drift diffusion solver we have been able to explain some of these results. Further implementation of physical processes, allowed us to explain the observed injection behavior.
Starting from these models, we have developed a simplified version, which can be solved analytically. This model has been implemented into a SPICE simulation package. The first Investigations have been very promising.
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