| 研究課題/領域番号 |
14J04955
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| 研究機関 | 東北大学 |
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研究代表者 |
唐 佳芸 東北大学, 大学院工学研究科, 特別研究員(DC2)
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| 研究期間 (年度) |
2014-04-25 – 2016-03-31
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| キーワード | interface oxidation / Si(111) / Si(001) / surface oxidation / oxide decomposition / strain / real-time / point defect |
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| 研究実績の概要 |
In this year, the mechanisms of the initial oxide growth and interface oxidation on the Si(111)7×7 and Si(111)2×1 surfaces depending on oxygen pressure and oxidation temperature, the correlation between the oxidation-induced strains generation and oxidations at the SiO2/Si(001) and SiO2/Si(111) interfaces, and the effect of the equilibrium between the interface strains formation and the point defects generation on the decomposition process of the ultrathin oxide (<1 nm) formed on the Si(111) and Si(001) surfaces have been clarified by both the real-time photoelectron spectroscopy measurements and theoretical calculations.The results show a strong correlation between the interface strains and interface oxidation rate, where oxidation at the interface is accelerated by the point defect generation (emitted Si atoms and vacancies) which is induced by highly accumulated interface strains. We proposed that strain-induced point defect near the interface plays an important role in the oxidation at the interface because of the high reactivity of the point defects with O2.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The experimental measurements, the data analysis and theoretical calculations were preformed successfully, and the mechanisms of surface oxidation and interface oxidation have been clarified. We proposed a brand new model of the surface oxidaition and the interface oxidation on Si(111) and Si(001) surfaces by considering the strain-induced point defect generation. Further we presented these results in several international conferences and received many useful advices, which can proceed our further studies.
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| 今後の研究の推進方策 |
In the further works, we will invesigate the changes of surface structures, surface roughness, the kinetics of the void nucleation and enlargement during the Si oxide decomposition to have a profound understanding of the effect of the interface strains on both the oxide growth and oxide decompostion. Finally, we can propose a unified model of both the oxide growth and oxide decompostion on the Si(001) and Si(111) surfaces.
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