ゲルマニウム／ひずみーシリコンヘテロ接合を用いたトンネル電界効果トランジスタ

2014 年度 実績報告書

• 研究課題/領域番号: 14J06072
• 研究機関: 東京大学
• 研究代表者: 金 ミンス 東京大学, 工学系研究科, 特別研究員(PD)
• 研究期間 (年度): 2014-04-25 – 2016-03-31
• キーワード: Tunnel FET / Strain Engineering / Ge-source / MOS interface

研究実績の概要

I have proposed the hetero-junction TFET with simple structure including Ge-source/strained-Si-channel for high performance. I have optimized the fabrication processes and demonstrated the proposed Ge/sSOI TFETs with high performance of steep subthreshold swing and high Ion/Ioff ratio.
The effects of the strain engineering in the channel on the TFET's performance are experimentally confirmed for the first time. Moreover, the relationship between the MOS interface quality and TFET's performance was clarified.

現在までの達成度 (区分)

1: 当初の計画以上に進展している

理由

The research is proceeding according to plan.

今後の研究の推進方策

1. Performance enhancement by back biasing
Recently, I have found the performance enhancement effect by back biasing. Therefore, The physical mechanism of the performance enhancement of TFET by the back biasing will be investigated and such effect will be used for further performance improvement.

2. Scaling the device size and EOT minimizing
Scaling the device size and EOT for maximizing device performances. Modification of the device structure and realization of high performance TFET with steep SS below 60 mV/dec and high Ion/Ioff ratio, comparable with that of advanced CMOS.

研究成果

• [雑誌論文] Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect (2015)
  • 著者名/発表者名: Minsoo Kim, Yuki K. Wakabayashi, Masafumi Yokoyama, Ryosho Nakane, Mitsuru Takenaka, and Shinichi Takagi
  • 雑誌名: IEEE Transactions on Electron Device 巻: 62 ページ: 9-15
  • DOI: 10.1109/TED.2014.2371038
  • 査読あり / 謝辞記載あり
• [雑誌論文] Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications (2014)
  • 著者名/発表者名: Minsoo Kim, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka, and Shinichi Takagi
  • 雑誌名: Thin Solid Films 巻: 557 ページ: 298-30
  • DOI: 10.1016/j.tsf.2013.10.067
  • 査読あり
• [学会発表] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs (2015)
  • 著者名/発表者名: Minsoo Kim, Yuki K. Wakabayashi, Masafumi Yokoyama, Ryosho Nakane, Mitsuru Takenaka, and Shinichi Takagi
  • 学会等名: The 62nd JSAP Spring Meeting
  • 発表場所: Tokai University (Kitakaname, Hiratsuka-shi, Kanagawa)
  • 年月日: 2015-03-11 – 2015-03-14
• [学会発表] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs (2015)
  • 著者名/発表者名: Minsoo Kim, Yuki K. Wakabayashi, Masafumi Yokoyama, Ryosho Nakane, Mitsuru Takenaka, and Shinichi Takagi
  • 学会等名: 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
  • 発表場所: Tohoku University (Aoba-ku, Sendai-shi, Miyagi)
  • 年月日: 2015-01-29 – 2015-01-30
• [学会発表] High Ion/Ioff Ge-source ultrathin body strained-SOI Tunnel FETs -impact of channel strain, MOS interfaces and back gate on the electrical properties (2014)
  • 著者名/発表者名: Minsoo Kim, Yuki K. Wakabayashi, Masafumi Yokoyama, Ryosho Nakane, Mitsuru Takenaka, and Shinichi Takagi
  • 学会等名: IEEE IEDM
  • 発表場所: San Francisco, California, USA
  • 年月日: 2014-12-15 – 2014-12-17
• [学会発表] Ge/Si Hetero-Junction TFETs with In-situ Boron-Doped Ge-Source (2014)
  • 著者名/発表者名: Minsoo Kim, Yuki K. Wakabayashi, Masafumi Yokoyama, Ryosho Nakane, Mitsuru Takenaka, and Shinichi Takagi
  • 学会等名: The 75th JSAP Autumn Meeting
  • 発表場所: Hokkaido University (Kita-ku, Sapporo-shi, Hokkaido)
  • 年月日: 2014-09-17 – 2014-09-20
• [備考] 極めて低い消費電力で動くトンネル電界効果トランジスターを開発
  • URL: http://www.jst.go.jp/pr/announce/20141215-3/index.html