| 研究実績の概要 |
Recently, ultra-low power systems have attracted considerably for mobile applications. In order to realize ultra-low voltage operation, the advanced structure, materials or new mechanism for operation should be needed. Besides, the short channel effects also should be considered deeply. Meanwhile, DIBL is one of the short channel effects, which is still lack of research about device power consumption. Thus, in this study, the effect of DIBL is investigated in low power devices such as steep s transistor and subthreshold device. Furthermore, low voltage operation with new mechanism whose name is Vth self-adjusting MOSFETs is introduced and tri-gate nanowire transistor with floating gate which is enabling Vth self-adjustment is proposed to suppress short channel effects.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
The correlation between DIBL and CMOS power consumption was clearly established by simulation. Besides, the characteristics of tri-gate nanowire transistor with floating gate were analyzed using device simulation, especially its Vth self-adjustment characteristics. These simulation results will be based on fabrication of tri-gate transistor with floating gate.
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