研究課題
基盤研究(A)
半導体ナノ結晶内に室温で電子・正孔の空間分離・閉じ込めを可能にする有殻・有芯のポテンシャル構造(擬似スーパーアトム構造)を実現し、均質な量子ドットに見られない固有な物性・機能を明らかにする。また、III族およびIV族不純物をデルタドーピングし、電子状態制御の指針を得る。Siナノ結晶上へのGeの選択成長およびGeナノ結晶上へのSiの選択成長を応用して、Geコアを持ったSiナノ結晶が形成できることを明らかにすると共に、導電性AFM探針を使った電子注入/放出後の表面電位像および電流像観察において、電子および正孔は、ナノ結晶内のエネルギーバンド構造を反映して、それぞれSiクラッドおよびGeコアに安定保持されることを明らかにした。Si系量子ドットへのPおよびBのデルタドーピングによって、電子注入/放出に必要な電位が、バンドギャップに相当する程度変化することを明らかにした。また、Pドープの場合は、伝導電子放出に伴うPドナーの顕在化による正帯電が安定保持され、Bドープの場合は、電子注入・再結合に伴うBアクセプタによる負帯電が安定であることを明らかにした。更に高密度立体集積したSi系量子ドットにおいて、局所注入した電子が、時間経過と共に隣接量子ドットへ分散する様子を明らかにした。Si量子ドット上へのNi蒸着量を制御して形成したNiシリサイドナノドットにおいて、同サイズのSi量子ドットに比べて、荷電状態が安定保持できることを明らかにした。
すべて 2005 2004 2003 その他
すべて 雑誌論文 (61件)
2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
ページ: 177-180
Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]
ページ: 174-175
Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
ページ: 294-295
Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
ページ: 32-33
Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]
ページ: 112-113
Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]
ページ: 100-101
Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]
ページ: 110-111
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)
ページ: 277-280 [A10.5]
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices [H-2-4]
ページ: 126-127
Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]
ページ: 54-55
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-17]
ページ: 50-51
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-18]
ページ: 52-53
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]
ページ: 90-91
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-31]
ページ: 82-83
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-39]
ページ: 98-99
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-34]
ページ: 88-89
Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]
ページ: 137
Abst. of 2004 MRS Fall Meeting(Boston, U.S.A., Nov. 29-Dec. 3,2004)
ページ: D5.8
Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004)
ページ: No. 1013
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
ページ: 42-43 [17]
ページ: 40-41 [16}
ページ: 44-45 [18}
Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)
ページ: 209-210 [2-45]
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
ページ: 37-40 [2.4]
ページ: 151-154 [7.4]
ページ: 145-149 [7.3]
Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)
ページ: 846-847 [E-9-1]
ページ: 300-301 [E-3-3]
Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31,2003)
ページ: 22-23 [29B-2-3]
Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)
ページ: 216-217 [286-68-L]
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-17]
ページ: 42-43
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-16]
ページ: 40-41
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-18]
ページ: 44-45
Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17,2003) [P2-45]
ページ: 209-210
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [2.4]
ページ: 37-40
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.4]
ページ: 151-154
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.3]
ページ: 145-149
Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-9-1]
ページ: 846-847
Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-3-3]
ページ: 300-301
Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31, 2003) [29B-2-3]
ページ: 22-23
Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]
ページ: 216-217
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]
ページ: 277-280
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.4]
ページ: 273-276
Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-17]
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-18]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-31]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-39]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-34]
Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]
Abst. of 2004 MRS Fall Meeting (Boston, U.S.A., Nov. 29-Dec. 3, 2004) D5-8
Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004) NO.1013
Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]
Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
