研究課題/領域番号 |
15H06141
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研究機関 | 東京大学 |
研究代表者 |
Holmes Mark 東京大学, ナノ量子情報エレクトロニクス研究機構, 准教授 (90760570)
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研究期間 (年度) |
2015-08-28 – 2017-03-31
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キーワード | 量子ドット |
研究実績の概要 |
Progress was made in the previous year. Based on previous work, we tuned the energy of the excitation laser to a region with a larger absorption (in the higher order continuum states of a single site-controlled nanowire GaN quantum dot). By doing this and finding a better excitation condition, we were actually able to reduce the effect of background emission and were able to observe photoluminescence from a single QD at temperatures up to 400K (the highest temperature so far recorded). Moreover, single photon emission was confirmed at a temperature of 350K for the first time. Emission spectra were measured at various temperatures and the linewidth broadening of a single nanostructure was charted from ~4K to 400K, giving us new information about the phonon-induced linewidth broadening. This work was very recently published in ACS Photonics.
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現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
Single photon emission from a site-controlled GaN nanowire quantum dot has been confirmed at 350K. However, the exact mechanism(s) of an observed intensity drop has not yet been determined.
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今後の研究の推進方策 |
From now on, work will carried out to investigate the observed sharp decrease in emission intensity observed at high temperature. We will also focus on the phonon-induced linewidth broadening, which, when combined with the biexciton binding energy, is likely to induce a working limit to the high temperature operation of such devices. Further studies into short wavelength emission (in the solar blind region) will also be carried out.
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