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2015 年度 実施状況報告書

廃プラスチックを利用したCVD法による巨大粒径グラフェンの合成と透明導電膜の開発

研究課題

研究課題/領域番号 15K21076
研究機関名古屋工業大学

研究代表者

カリタ ゴラップ  名古屋工業大学, 工学(系)研究科(研究院), 准教授 (20615629)

研究期間 (年度) 2015-04-01 – 2017-03-31
キーワードgraphene
研究実績の概要

In this research proposal, we planned to synthesis graphene film constituting large domains by the developed solid carbon source based CVD technique. Waste plastics containing polystyrene and polyethylene is explored as the solid carbon source for synthesis of large graphene domains. In this prospect, we investigated the annealing process to create an oxide layer and subsequent recrystallization of Cu foil for growth of large graphene domain by the CVD technique. Initially, electroless polished Cu foils are annealed in Ar and then in H2 atmosphere to obtain a smoother surface with reduced graphene nucleation sites. The transformation of Cu grain structures at various annealing steps was confirmed, where the gas atmosphere and annealing duration have significant influence. Formation of millimeter scale structures are obtained with merging of 560 and 825µm large two graphene domains. Again, we have demonstrated H2 induced etching features of graphene crystals with different structures synthesized from polystyrene. We synthesized six-lobed dendritic graphene along with regular graphene crystals on electro-polished Cu foil by an AP-CVD process. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystal by annealing at 1055℃ in a gas mixture of H2 and Ar. We have also observed hexagonal-hexagonal stacking formation along with the snowflake dendritic crystals and their particular etching behavior. This finding can be significant to understand the nucleation and growth of graphene crystals.

現在までの達成度 (区分)
現在までの達成度 (区分)

2: おおむね順調に進展している

理由

In the last one year we are able to grow large size graphene domain as planned early using the organic molecules of waste plastic as carbon source. Presently, experiments on synthesis of much larger graphene domain and their continuous film are going on by the optimizing the precursor injection rate.

今後の研究の推進方策

The role of O2 and H2 in growth process of large graphene domain with minimum defect on Cu substrate will be explored. Thus controlling the nucleus on substrate we expect to growth centimeter-scale domain at a higher growth rate using the solid carbon source containing linear carbon chain and carbon rings. We are performing experiments on developments of graphene transfer process for fabrication of transparent conductor. We are expecting to fabricate highly transparent graphene electrode with low sheet resistance than that of present status.

次年度使用額が生じた理由

The amount was not used as we have to purchase new costly CVD parts in the next fiscal year. The remaining amount will be used to purchase CVD parts along with amount of 2nd financial year. We expect that this will help us to achieve the goal of the research proposal.

次年度使用額の使用計画

Purchase of CVD parts to achieve control injection of carbon precursors. This will help us to growth large graphene domains and thereby fulfilling the research goals.

  • 研究成果

    (5件)

すべて 2016 2015

すべて 雑誌論文 (2件) (うち国際共著 2件、 査読あり 2件、 謝辞記載あり 2件) 学会発表 (2件) (うち国際学会 1件) 図書 (1件)

  • [雑誌論文] Effect of copper foil annealing process on large graphene domain growth by solid source-based chemical vapor deposition2016

    • 著者名/発表者名
      K.P.Sharma, S.Sharma, S.M.Shinde, G.kalita (corresponding author), M.Tanemura
    • 雑誌名

      Journal of Materials Science (2016)

      巻: - ページ: 1-9

    • DOI

      1007/s10853-016-0003-8

    • 査読あり / 国際共著 / 謝辞記載あり
  • [雑誌論文] Structure dependent hydrogen induced etching features of graphene crystals2015

    • 著者名/発表者名
      2.A.Thangaraja, S.Shinde, G.Kalita (corresponding author), M.Tanemura
    • 雑誌名

      Applied Physics Letters

      巻: 106 ページ: 253106(1-5)

    • DOI

      org/10.1063/1.4922991

    • 査読あり / 国際共著 / 謝辞記載あり
  • [学会発表] Role of Copper Substrate Annealing on Graphene Crystal Synthesis by Atmospheric Pressure Chemical Vapor Deposition2016

    • 著者名/発表者名
      K.P.Sharma, S.Sharma, G.Kalita, M.Tanemura
    • 学会等名
      11th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems
    • 発表場所
      Japan
    • 年月日
      2016-04-17 – 2016-04-20
    • 国際学会
  • [学会発表] Optimization of CVD parameters for graphene synthesis through designs of experiments2016

    • 著者名/発表者名
      R.Papon, C.Pierlot, S.Sharma, S.Shinde, G.Kalita, M.Tanemura
    • 学会等名
      第63回応用物理学会春季学術講演会
    • 発表場所
      Japan
    • 年月日
      2016-03-19 – 2016-03-22
  • [図書] Graphene Science Handbook2016

    • 著者名/発表者名
      G.Kalita, M.Umeno, M.Tanemura
    • 総ページ数
      20
    • 出版者
      Crc press taylor & francis group

URL: 

公開日: 2017-01-06  

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