| 研究実績の概要 |
In this study, we have focused on the “InGaN/GaN core-shell nanowire-based solar cells”. Accompanying to the superior properties of GaN core nanowire array, the use of InGaN materials is able to cover the almost all solar spectral range from 0.7 eV to 3.4 eV. This can open up the new chance for III-V solar cells to overcome the performance of traditional inorganic solar cells, which are based on Si or GaAs materials. As this project comes to the last year, we studied many optical and material properties of GaN-based nanowires. In particular, we performed the growth of GaN nanowires with various templates. It gives rise to new chance to demonstrate optoelectronic devices with controlled orientation and morphology. As a result, we have reported three SCI papers and nine international conference talks. Also, international collaboration has simulaneously been carried out with South Korea and France with the similar project topics. These international joint research inspired us to study deeply about the "InGaN-based solar cells". Although we are sure that we contributed many points on the development of the topic, still many rooms remained to demonstrate the high efficiency devices. Therefore, the continuation of the work for this project is really necessary to advance the nanowire-based optoelectronics.
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