| 研究課題/領域番号 |
16F16045
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| 研究機関 | 国立研究開発法人理化学研究所 |
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研究代表者 |
金 有洙 国立研究開発法人理化学研究所, Kim表面界面科学研究室, 主任研究員 (50373296)
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| 研究分担者 |
WALEN HOLLY 国立研究開発法人理化学研究所, Kim表面界面科学研究室, 外国人特別研究員
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| 研究期間 (年度) |
2016-10-07 – 2019-03-31
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| キーワード | TMD thin film / Insulating monolayer / STM / IV spectroscopy / Electroluminescence / TMD devices |
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| 研究実績の概要 |
Dr. Walen fabricated and analyzed single-layer insulating hexagonal boron nitride on nickel and copper surfaces using STM, LEED, and XPS. Single phthalocyanine molecules were adsorbed to the h-BN to determine the ability of the h-BN to optically and electronically isolate single molecules from the underlying metal substrate. It turned out that the h-BN was ineffectual for optical decoupling.
Thus, the experimental approach was changed, and Dr. Walen began analyzing transition metal dichalcogenide samples on many different substrates, prepared by our collaborators. We have been working closely with professors from these three universities to characterize many sample systems for her project.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
2: おおむね順調に進展している
理由
The main purpose of Dr. Walen’s study is to better define model transition metal dichalcogenide devices, especially regarding their lateral defects and interfacial characteristics, at the single-atom level. We plan to achieve this using scanning tunneling microscopy, spectroscopy, and electroluminescence, all of which we can achieve with high spatial resolution. This study is crucial to understand the properties of specific defect and interfacial structures for further manipulation or fabrication.
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| 今後の研究の推進方策 |
Dr. Walen will continue to analyze and characterize samples from our collaborators, investigating local physical, electronic, and optical properties at the single-atom level.
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