| 研究実績の概要 |
Although silicon heterojunction silicon solar cells show high efficiency, their low heat resistance and optical losses at the passivation layer hinder further efficiency improvement. The aim of this work is the fabrication of a simple p-type contact structure that overcomes these issues and combines simultaneously high passivation quality and low contact resistivity. For this purpose, the stack of a very thin oxide layer and a hole selective layer was considered.
A thin SiOx layer was adopted as the passivation layer, which can be fabricated by a simple wet process at room temperature. Initially, p-μc-SiOx:H was adopted as the hole selective layer material. We found that inserting the SiOx between the silicon wafer and the p-μc-SiOx:H layer was effective in hindering interfacial recombination. However, the damage caused by the p-μc-SiOx:H deposition resulted in a passivation quality inferior than that required for a high efficiency solar cell.
Aiming in improving the passivation quality, MoOx was applied as an alternative material for the hole selective layer. MoOx can be fabricated by a low-damage process and is, therefore, suitable for solar cell application. Inserting the SiOx layer between the silicon wafer and the MoOx layer results in implied-Voc improving from 653 to 667 mV.
These results indicate that this approach is promising for the realization of a simple p-type contact that possesses both low contact resistance and high passivation quality for crystalline silicon solar cells.
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