| 研究実績の概要 |
Pt-catalyzed water etching of SiC and its removal mechanism were investigated. The results were published in journal and presented at conferences: Publication: A. Isohashi, P. V. Bui et al. Chemical etching of silicon carbide in pure water by using platinum catalyst, Appl. Phys. Lett. 110, 201601, 2017. Conference: (1) ベトナム－日本学術交流会議、伊都キャンパス、九州大学、福岡 28/09/17 Wet chemical planarization of SiC surface（口頭）Best presentation award. (2) European conference on surface science, 28/08/28～8/09/02,Grenoble, France. First-principles simulations of Platinum-assisted water etching of SiC (Oral). (3) The 8th international workshop on advanced materials science and nanotechnology, 28/11/08～28/11/12 Halong, Vietnam. Wet-chemical planarization of SiC wafers for advanced optoelectronics applications (Oral)
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
1: 当初の計画以上に進展している
理由
In the first year, I have clarified the three main proposed topics. (1) The termination species on the processed surface and the effect of Pt catalyst state are investigated. I found that bare Pt surface is suitable for the etching. (2) I tried some catalyst metals, such as Au, Cu, Ni, Ag. I found that Ni is the best catalyst metal among the investigated metals. (3) Using DFT simulations, the interaction between water and SiC surface are investigated. A low activation barrier pathway for the etching of SiC in water was found. The Pt catalyzes the water dissociation and stabilizes the hypervalent state which lowering the activation barrier.
The obtained results are very interesting for the application of CARE to various materials. This expectation will be investigated in this fiscal year.
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| 今後の研究の推進方策 |
I plan to investigate three topics. (1) A general understanding of the role of the catalyst: From the obtained results in the first year, a deeper understanding of catalyst role is carried out. The barrier-reduction mechanism will be investigated via the dependence of the etching characteristics on the candidate catalysts, and by comparing the corresponding simulation results. (2) Applying water-CARE to GaN and other nitride and oxide materials: A detailed experimental study will be conducted of the removal characteristics of water-CARE applied to GaN, and of the quality of the resulting surfaces. (3) Studying the reaction mechanism of water-CARE for GaN: Using DFT simulations to understand hydrolysis and water-GaN interactions on the surface of the samples.
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