| 研究実績の概要 |
Detecting dynamics of carrier in nano-device is a challenge for decades. To solve the issue, we use a THz scanning near-field optical microscope (SNOM) to realize the detection.
In graphene and NiCr device, excess noise-induced evanescent wave was detected. According to simulation, the near-field (NF) intensity is consistent with the current distribution. In GaAs semiconductor device, the NF signal extending out of the constriction region was detected, which originates from energy dissipation of hot electron. In summary, the THz SNOM is a novel equipment for studying nanoscale carrier dynamics.
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