| 研究実績の概要 |
1)The fabrication processing of LED device, such as lithography, metal deposition,mesa isolation and dielectric passivation has been improved.
2)The epitaxy of tunneling junction has been optimized in epilayer thickness, doing concentration, and alloy composition.
3)The device processing of tunneling junction has been optimized.
4)The epitaxy of multiple quantum wells (MQWs) has been improved in growth temperature, quantum well thickness and alloy composition.
5)Simulation of tunneling junction for the better device performance has been finished.Simulation results has been used to guide the epitaxial process of tunneling juncton and MQWs.
6)The device characteristics of tunneling junction has been investigated in current-voltage measurement.
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| 現在までの達成度 (区分) |
現在までの達成度 (区分)
3: やや遅れている
理由
My research organization has been changed this year.
New training for device processing is underway.
Therefore, more time is greatly needed.
Moreover, because the epitaxial equipment for the tunneling junction and LED has been changed, the epitaxy conditions are being improved for the better performance of epilayer and device.
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