2018 年度実績報告書

High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction

研究課題

研究課題/領域番号	16K17533
研究機関	国立研究開発法人産業技術総合研究所
研究代表者	Zhang Kexiong 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 (80774463)
研究期間 (年度)	2016-04-01 – 2019-03-31
キーワード	GaN / polarization / LED / tunneling junction
研究実績の概要	1.The epitaxy of InGaN/GaN MQWs with high indium composition and polarization-induced tunneling junction by using MOCVD was investigated.2.The optical properties of InGaN/GaN MQWs with high indium composition was investigated.The relationship between indium composition and performance of MQWs was analysed.3.The device processing of tunneling junction and LED was developed.

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