| 研究実績の概要 |
The excellent physical properties of semiconductor diamond make it a promising candidate material for high-power and high-frequency electronic device fabrication. However, the lack of large-area single-crystal diamond wafers hinders practical device development. This issue has led us to downscale diamond electronic devices. The triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) architecture offers a way to extend device downscaling and increase device output current. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate MOSFET. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current is much higher than that of the planar-type device, and the on/off ratio and subthreshold swing are more than 10e8 and as low as 110 mV/dec, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
|
